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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 11/2017

16.02.2017

A comparative TCAD simulations of a P-and N-type organic field effect transistors: field-dependent mobility, bulk and interface traps models

verfasst von: A. Boubaker, B. Hafsi, K. Lmimouni, A. Kalboussi

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 11/2017

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Abstract

Pentacene and Polyera™ N2200 based-organic field effect transistors (OFETs), have been fabricated and simulated in a bottom-gate/back contacts configuration. The simulations were processed with the help of 2D drift–diffusion model. Comparison and analysis of the electrical characteristics of both n- and p-channel OFETs have been investigated. The study was centred on the electrical performance of every structure in term of mobility, fixed charge at the oxide/semiconductor interface and bulk traps density and its related energy. The dependence of the transfer characteristic on the grain boundaries traps state, in the case of pentacene, has been also outlined. Comparison between the simulation results and our experimental data show a good agreement. We finally present how our model can be applied to different devices with different channel length and we analyse their relationship with extracted electrical parameters.
Vorheriger Artikel Cu–Sn and Ni–Sn transient liquid phase bonding for die-attach technology applications in high-temperature power electronics packaging
Nächster Artikel Density of states and impedance behaviour of transition metal substituted SrBi2Nb2O9 ferroelectric nanoceramics prepared by chemical process

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Metadaten
Titel
A comparative TCAD simulations of a P-and N-type organic field effect transistors: field-dependent mobility, bulk and interface traps models
verfasst von
A. Boubaker
B. Hafsi
K. Lmimouni
A. Kalboussi
Publikationsdatum
16.02.2017
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 11/2017
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-6480-y

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