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Erschienen in:
2014 | OriginalPaper | Buchkapitel
A Comparison of Hot Carrier and 50 MeV Li3+ Ion Induced Degradation in the Electrical Characteristics of Advanced 200 GHz SiGe HBT
verfasst von : K. C. Praveen, N. Pushpa, M. N. Bharathi, John D. Cressler, A. P. Gnana Prakash
Erschienen in: Physics of Semiconductor Devices
Verlag: Springer International Publishing
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The degradation in the electrical characteristics of advanced 200 GHz SiGe HBTs were studied by mixed mode electrical stress up to 10,000 s. The degradation in the electrical characteristics of SiGe HBTs was also studied by exposing the SiGe HBTs to 50 MeV lithium [Li
3+
] ions. The electrical characteristics were measured before and after every total dose and after fixed stress time. The normalized peak h
FE
of the stressed and irradiated SiGe HBTs are compared to estimate the equivalent stress time for a particular total dose. These correlations are drawn for the first time and the results will establish a systematic relation between stress time and irradiation time.