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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 1/2017

11.11.2016

A GMR device based on a magnetic nanostructure with a \(\updelta \)-doping

verfasst von: Xu-Hui Liu, Zheng-Hua Tang, Yong-Hong Kong, Xi Fu, Yan-Jun Gong

Erschienen in: Journal of Computational Electronics | Ausgabe 1/2017

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Abstract

We study how to manipulate by the \(\updelta \)-doping a giant magnetoresistance (GMR) device, which can be realized experimentally by depositing two parallel ferromagnetic stripes on top and bottom of the semiconductor \(\hbox {GaAs/Al}_{x}\hbox {Ga}_{1-x}\mathrm{As}\) heterostructure. We demonstrate an obvious GMR effect in the device with a \(\updelta \)-doping. We also reveal that the magnetoresistance ratio depends not only on the weight but also on the position of the \(\updelta \)-doping. These interesting results will be helpful for designing controllable GMR devices.
Vorheriger Artikel Design and performance analysis of a CNFET-based TCAM cell with dual-chirality selection
Nächster Artikel A simulation study of voltage-assisted low-energy switching of a perpendicular anisotropy ferromagnet on a topological insulator

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Metadaten
Titel
A GMR device based on a magnetic nanostructure with a -doping
verfasst von
Xu-Hui Liu
Zheng-Hua Tang
Yong-Hong Kong
Xi Fu
Yan-Jun Gong
Publikationsdatum
11.11.2016
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 1/2017
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-016-0931-1

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