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Microsystem Technologies
Erschienen in: Microsystem Technologies 6/2017

21.05.2016 | Technical Paper

A measurement free pre-etched pattern to identify the <110> directions on Si{110} wafer

verfasst von: S. S. Singh, V. N. Avvaru, S. Veerla, A. K. Pandey, P. Pal

Erschienen in: Microsystem Technologies | Ausgabe 6/2017

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Abstract

In this paper, we present a self-aligning pre-etched pattern based technique to precisely determine the <110> direction on Si{110} wafer surface. These patterns after etching, reveals the crystallographic direction by self-aligning itself in a straight line at the <110> direction while getting self-misaligned at other directions. As a result, the exact direction can be identified by a simple visual inspection under a microscope without the need of measurement of any kind. To test the accuracy of the proposed method, we fabricated two 32 mm long channels, one oriented along the <110> direction and other along the <112> directions using the <110> direction obtained from the proposed method as the reference. The undercutting is measured at different locations on the two channels and is found to vary within a submicron range in each case. Such uniform undercutting implies that the presented technique to determine the <110> direction is accurate. This methodology is simple and can be used conveniently to fabricate MEMS structures with high dimensional accuracy.
Vorheriger Artikel Back-end-of-line compatible Poly-SiGe lateral nanoelectromechanical relays with multi-level interconnect
Nächster Artikel Ultrasonically manufactured microfluidic device for yeast analysis

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Literatur
Ahn M, Heilmann RK, Schattenburg ML (2007) Fabrication of ultrahigh aspect ratio free standing gratings in Silicon on insulator wafers. J Vac Sci Technol.B 25:2593–2597
Ashok A, Pal P (2015) Silicon micromachining in 25 wt% TMAH without and with surfactant concentrations ranging from ppb to ppm. Microsyst Technol, pp 1–8
Backlund Y, Rosengren L (1992) New shapes in (100) Si using KOH and EDP etches. J Micromech Microeng 27:5–9
Baryeka I, Zubel I (1995) Silicon anisotropic etching in KOH-isopropanol etchant. Sens Actuators, A 48:229–238CrossRef
Chang WH, Huang YC (2005) A new pre-etching pattern to determine (1 1 0) crystallographic orientation on both (100) and (1 1 0) silicon wafers. Microsys Technol 11:117–128CrossRef
Choi WK, Thong JTL, Luo P, Tan CM, Chua TH, Bai Y (1998) Characterisation of pyramid formation arising from the TMAH etching of silicon. Sens Actuators, A 71:238–243CrossRef
Ciarlo DR (1992) A latching accelerometer fabricated by the anisotropic etching of (110) oriented silicon wafers. J Micromech Microeng 2:10–13CrossRef
Dutta S, Imran Md, Kumar P, Pal R, Datta P, Chatterjee R (2011) Comparison of etch characteristics of KOH, TMAH and EDP for bulk micromachining of silicon (110). Microsyst Technol 17:1621–1628CrossRef
Ensell G (1996) Alignment of mask patterns to crystal orientation. Sens Actuators, A 53:345–348CrossRef
Gosalvez MA, Pal P, Tang B, Sato K (2010) Atomistic mechanism for the macroscopic effects induced by small additions of surfactants to alkaline etching solutions. Sens Actuators, A 157:91–95CrossRef
Holke A, Henderson HT (1999) Ultra-deep anisotropic etching of (110) silicon. J Micromech Microeng 9:51–57CrossRef
James TD, Parish G, Winchester KJ, Musca CA (2006) A crystallographic alignment method in silicon for deep, long microchannel fabrication. J Micromech Microeng 16:2177–2182CrossRef
Kendall DL (1979) Vertical etching of silicon at very high aspect ratios. Annu Rev Mater Sci 9:373–403CrossRef
Kim HS, Kim JM, Bang YS, Song ES, Ji CH, Kim YK (2012) Fabrication of a vertical sidewall using double-sided anisotropic etching of (100) oriented silicon. J Micromech Microeng 22:095014
Lai JM, Chieng WH, Huang YC (1998) Precision alignment of mask etching with respect to crystal orientation. J Micromech Microeng 8:327–329CrossRef
Lee S, Park S, Cho D (1999) The surface/bulk micro- machining (sbm) process: a new method for fabricating released microelectromechanical systems in single crystal silicon. J Microelectromech Syst 8:409–416CrossRef
Lee D, Yu K, Krishnamoorthy U, Solgaard O (2009) Vertical mirror fabrication combining KOH etch and DRIE of (1 1 0) silicon. J Microelectromech Syst 18:217–227CrossRef
Lu H, Zhang H, Jin M, He T, Zhou G, Shui L (2016) Two-layer microstructures fabricated by one-step anisotropicwet etching of Si in KOH solution. Micromachines 7:1–7CrossRef
Pal P, Chandra S (2004) Bulk-micromachined structures inside anisotropically etched cavities. Smart Mater Struct 13:1424–1429CrossRef
Pal P, Sato K (2009) Complex three dimensional structures in Si{100} using wet bulk micromachining. J Micromech Microeng 19:105008
Pal P, Sato K (2009) Various shapes of silicon freestanding microfluidic channels and microstructures in one step lithography. J Micromech Microeng 19(5):055003
Pal P, Sato K (2010) Fabrication methods based on wet etching process for the realization of silicon MEMS structures with new shapes. Microsyst Technol 16:1165–1174CrossRef
Pal P, Sato K (2015) A comprehensive review on convex and concave corners in silicon bulk micromachining based on anisotropic wet chemical etching. Micro Nano Syst Lett 3:1–42CrossRef
Pal P, Singh SS (2013a) A simple and robust model to explain convex corner undercutting in wet bulk micromachining. Micro Nano Systs Lett 1:1–6CrossRef
Pal P, Singh SS (2013b) A new model for the etching characteristics of corners formed by Si 111 planes on Si 110 wafer surface. Eng 5:1–8CrossRef
Pal P, Sato K, Gosalvez M A, Tang B, Hida H, Shikida M (2011) Fabrication of novel microstructures based on orientation dependent adsorption of surfactant molecules in TMAH solution. J Micromech Microeng 21(1):015008
Pal P, Gosalvez M A, Sato K, Hida H, Xing Y (2014) Anisotropic etching on Si{110}: Experiment and simulation for the formation of microstructures with convex corners. J Micromech Microeng 24:125001
Pal P, Haldar S, Singh SS, Ashok A, Xing Y, Sato K (2014) A detailed investigation and explanation to the appearance of different undercut profiles in KOH and TMAH. J Micromech Microeng 24:095026
Pal P, Ashok A, Haldar S, Xing Y, Sato K (2015) Anisotropic etching in low concentration KOH: effects of surfactant concentration. Micro Nano Letters 10:224–228CrossRef
Powell O, Harrison HB (2001) Anisotropic etching of 100 and 110 planes in (100) silicon. J Micromech Microeng 11:217–220CrossRef
Resnik D, Vrtacnik D, Aljancic U, Amon S (2003) Effective roughness reduction of 100 and 311 planes in anisotropic etching of 100 silicon in 5 % TMAH. J Micromech Microeng 13:26–34CrossRef
Rola KP, Ptasinski K, Zakrzewski A, Zubel I (2014) Silicon 45° micromirrors fabricated by etching in alkaline solutions with organic additives. Microsyst Technol 20:221–226CrossRef
Schnakenberg U, Benecke W, Lochel B (1990) NH4OH-based etchant for silicon micromachining. Sens Actuators, A 23:1031–1035CrossRef
Seidel H, Csepregi L, Heuberger A, Baumgartel H (1990) Anisotropic etching of crystalline silicon in alkaline solutions I: orientation dependence and behavior of passivation layers. J Electrochem Soc 137(11):3612–3626CrossRef
Singh S S, Veerla S, Sharma V, Pandey A K, Pal P (2016) Precise identification of <100> directions on Si {001} wafer using a novel self-aligning pre-etched technique J Micromech Microeng 26:25012
Tabata O, Asahi R, Funabashi H, Shimaoka K, Sugiyama S (1992) Anisotropic etching of silicon in TMAH solutions. Sens Actuators, A 34:51–57CrossRef
Tanaka H, Yamashita S, Abe Y, Shikida M, Sato K (2004) Fast etching of silicon with a smooth surface in high temperature ranges near the boiling point of KOH solution. Sens Actuators, A 114:516–520CrossRef
Tang B, Sato K (2011) Formation of silicon nano tips in surfactant-modified wet anisotropic etching. Applied Physics Express 4(56501):1–3
Tang B, Yao MQ, Tan G, Pal P, Sato K, Su W (2014) Smoothness control of wet etched Si{100} surfaces in TMAH + Triton. Key Eng Mater 609:536–541
Tellier CR, Charbonnieras AR (2003) Characterization of the anisotropic chemical attack of (hhl) silicon plates in a TMAH 25 wt% solution: micromachining and adequacy of the dissolution slowness surface. Sens Actuators, A 105:62–75CrossRef
Tolmachev VA, Granitsyna LS, Vlasova EN, Volchek BZ, Nashchekin AV, Remenyuk AD, Astrova EV (2002) One-dimensional photonic crystal obtained using vertical anisotropic etching of silicon. Semiconductors 36:932–935CrossRef
Tseng FG, Chang KC (2003) Precise [100] crystal orientation determination on 110 oriented silicon wafers. J Micromech Microeng 13:47–52CrossRef
Vangbo M, Baecklund Y (1996) Precise mask alignment to the crystallographic orientation of silicon wafers using wet anisotropic etching. J Micromech Microeng 6:279–284CrossRef
Xing Y, Gosalvez MA, Sato K (2007) Step flow-based cellular automaton for the simulation of anisotropic etching of complex MEMS structures. New J Phys 9:436 (18 pp)
Xu YW, Michael A, Kwok CY (2011) Formation of ultra-smooth 45◦ micromirror on (100) silicon with low concentration TMAH and surfactant: techniques for enlarging the truly 45° portion. Sens Actuators, A 166:164–171CrossRef
Yagyu H, Yamaji T, Nishimura M, Sato K (2010) Forty-five degree micromirror fabrication using silicon anisotropic etching with surfactant-added tetramethylammonium hydroxide solution. Jpn J Appl Phys 49(096503):1–8
Zhang H, Xing Y, Gosalvez MA, Pal P, Sato K (2015) Removal probability function for Kinetic Monte Carlo simulations of anisotropic etching of silicon in alkaline etchants containing additives. Sens Actuators, A 233:451–459CrossRef
Zubel I, Kramkowska M (2009) Possibilities of extension of 3D shapes by bulk micromachining of different Si (hk l) substrates J Micromech Microeng 15:485–493
Metadaten
Titel
A measurement free pre-etched pattern to identify the <110> directions on Si{110} wafer
verfasst von
S. S. Singh
V. N. Avvaru
S. Veerla
A. K. Pandey
P. Pal
Publikationsdatum
21.05.2016
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 6/2017
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-016-2984-2

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