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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 4/2017

11.11.2016

A new fabrication process of TGV substrate with silicon vertical feedthroughs using double sided glass in silicon reflow process

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 4/2017

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Abstract

This paper presents a new fabrication process of through glass via (TGV) substrate, which combines glass and silicon into a single wafer. By using double sided glass in silicon reflow process with a patterned silicon mold, a thick and robust TGV substrate which is difficult or timewasting to realize by single side glass reflow process could be achieved. The fabrication process and parameters are studied in details. Surfacing roughness of the TGV substrate after polishing is measured to be 3.421 nm, showing a high surface quality for anodic bonding process. Resistance of vertical feedthroughs are measured in the range of 180 to 260 Ω, indicating that the substrate can be used in a large variety of application. Finally, strength tests of the bonding interface are measured to be as high as 7.28 MPa, indicating a mechanically strong bonding.
Vorheriger Artikel Multicolor luminescence of PbWO4: RE3+ (Sm3+, Dy3+, Eu3+ and Tb3+) phosphor prepared via hydrothermal method
Nächster Artikel Novel multilayer arrangement of conductive layers traps the electromagnetic interferences by multiple internal reflections at high frequency in the far field

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Metadaten
Titel
A new fabrication process of TGV substrate with silicon vertical feedthroughs using double sided glass in silicon reflow process
Publikationsdatum
11.11.2016
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 4/2017
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-6005-0

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