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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 1/2018

08.09.2017

A novel model for graphene-based ion-sensitive field-effect transistor

verfasst von: Tarek El-Grour, Montasar Najari, Lassaad El-Mir

Erschienen in: Journal of Computational Electronics | Ausgabe 1/2018

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Abstract

Graphene field-effect transistors (GFETs) are a promising candidate for sensing applications because of their high charge carrier mobility, high flexibility, biocompatibility and the ideal coupling between graphene charge carriers and surface potential. Coating graphene with sensing membrane fabricated high-k materials that can be used to pH sensing in aqueous solutions. This work presents the development of an analytical model for GFET-based pH sensor. This model can help in the investigation of the sensitivity mechanism related to the ambipolar characteristic of the GFET and theory of site binding and a Gouy–Chapman–Stern model. Finally, simulation results are compared with those extracted from experimental measurements and a good agreement is observed which validates the proposed analytical model.
Vorheriger Artikel Analytical modeling of gate-all-around junctionless transistor based biosensors for detection of neutral biomolecule species
Nächster Artikel Adsorption effect of and gas molecules on ZnSe nanotube devices: first principles analysis

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Metadaten
Titel
A novel model for graphene-based ion-sensitive field-effect transistor
verfasst von
Tarek El-Grour
Montasar Najari
Lassaad El-Mir
Publikationsdatum
08.09.2017
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 1/2018
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-017-1068-6

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