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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 8/2016

01.08.2016

A numerical study on the influence of interface recombination on performance of carbon nanotube/GaAs solar cells

verfasst von: Hossein Movla, Sajjad Ghaffari, Elham Rezaei

Erschienen in: Optical and Quantum Electronics | Ausgabe 8/2016

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Abstract

Carbon nanotubes (CNT) have unique electronic properties and remarkable optical properties. Despite of on layer thickness of CNTs, it has able to absorb photons from visible to far infrared and terahertz. These unique properties lets to create heterojunction devices by semiconductor/CNTs or metal/CNTs junctions e.g. photodiodes, sensor and heterojunction solar cell. The CNTs can play the role of a heterojunction component for charge separation as a high conductive network for charge transport and as a transparent electrode for light illumination and charge collection. The main objective of the present article is to establish a relation between interface recombination and the characteristics parameters of the heterojunction solar cell based on armchair single walled carbon nanotube as absorber and GaAs as window. It is shown that by increasing the interface recombination open circuit voltage decreases dramatically. Depletion current, J–V characteristic and ideality factor variation in terms of interface recombination has been calculated. Interface recombination at the SWCNT/GaAs interface of the cell leads to a considerable drop of the cell voltage and to a lesser extent to the associated reduction in the cell short circuit current.
Vorheriger Artikel Optical properties of intermixed vertical cavity surface emitting lasers: a theoretical model
Nächster Artikel Focusing behavior of azimuthally structured square zone plate

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Metadaten
Titel
A numerical study on the influence of interface recombination on performance of carbon nanotube/GaAs solar cells
verfasst von
Hossein Movla
Sajjad Ghaffari
Elham Rezaei
Publikationsdatum
01.08.2016
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 8/2016
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-016-0656-1

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