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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 4/2019

29.08.2019

A particle swarm neural networks electrothermal modeling approach applied to GaN HEMTs

verfasst von: Anwar H. Jarndal, Sanaa Muhaureq

Erschienen in: Journal of Computational Electronics | Ausgabe 4/2019

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Abstract

This paper presents a simple approach to model the self-heating effect in GaN high electron mobility transistors (HEMTs) using a particle swarm neural network and also reports the extraction procedure of the model parameters. The main advantage of the developed method is its simplicity of construction and implementation in computer-aided-design tools. The developed modeling procedure is applied to a packaged GaN HEMT and validated by DC and AC small/large-signal simulations, which showed a very good agreement with the measurements.
Vorheriger Artikel Heat transfer improvement study of electronic component surfaces using air jet impingement
Nächster Artikel Analysis of microwave noise in an enhancement-mode dual-quantum-well InAs HEMT

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Metadaten
Titel
A particle swarm neural networks electrothermal modeling approach applied to GaN HEMTs
verfasst von
Anwar H. Jarndal
Sanaa Muhaureq
Publikationsdatum
29.08.2019
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 4/2019
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-019-01397-1

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