nach oben

Erschienen in:

2015 | OriginalPaper | Buchkapitel

2. A Synopsis on the State of the Art of NAND Memories

verfasst von : Kirk Prall, Nirmal Ramaswamy, Akira Goda

Erschienen in: Charge-Trapping Non-Volatile Memories

Verlag: Springer International Publishing

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config

KI-gestützte Suche

Aus

Abstract

NAND memory has become the workhorse nonvolatile memory enabling massive amounts of data to be stored in many electronic devices. There is a high probability that the reader has several devices nearby which contain NAND memory. NAND memory’s combination of simplicity, low cost, high density, low power, and scalability in a solid state device has created a ubiquitous explosion in the NAND market. In 2014, it is estimated that ~6 × 10¹⁹ bytes of NAND was shipped (Greg Wong Forward Insights) which is enough to supply a gigabite to every person on the planet (7.2 billion). NAND has crushed less capable memory such as NOR in the market place and is continuing to take market share from hard disk drives pushing them out of the lower density market. As a historical reference a 2013 state of the art 128 Gb 16 nm NAND chip can hold as much data as ~11,000 circa 1986 1.44 MB 90 mm floppy disks which was state of the art at that time (Wikipedia). The impact of NAND on the electronic experience of the consumer has been huge and largely invisible. The accomplishments of the technologists and industry in taking NAND from its invention in 1987 to its dominant position today have been truly amazing. The technology proved to be easily scalable.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 340 Zeitschriften

aus folgenden Fachgebieten:

Bauwesen + Immobilien
Business IT + Informatik
Finance + Banking
Management + Führung
Marketing + Vertrieb
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Aritome S (2013) Study of NAND Flash memory cells. Dissertation. Hiroshima University, Hiroshima

Asenov A et al (2001) Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: A 3-D density gradient simulation study. IEEE TRED, New York, NY, p 722

Asenov A et al (2003) Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness. IEEE TRED, New York, NY, p 1254

Bae S et al (2009) The 1/f noise and random telegraph noise characteristics in floating gate NAND Flash memories. IEEE TRED, New York, NY, p 1624

Belgal H et al (2002) A new reliability model for post cycling charge retention of flash memories. IEEE IRPS, p 7

Brewer J et al (2008) Nonvolatile memory with emphasis on Flash. IEEE Press, Piscataway, NJ

Brown W et al (1998) Nonvolatile semiconductor memory technology. IEEE Press, Piscataway, NJ

Cappelletti P et al (1999) Flash memories. Kluwer, DordrechtCrossRef

Chang K et al (2012) An advanced embedded flash technology for broad market applications. IEEE ICSICT

Compagnoni M et al (2008) Ultimate accuracy for the NAND Flash program algorithm due to the electron injection statistics. IEEE TRED, New York, NY, p 2695

Frohman-Bentchkowsky D (1973) Electrically programmable read only memory array. US Patent, 3,744,036

Fujiki J et al (2009) Successful suppression of dielectric relaxation inherent to high-K NAND from both architecture and material points of view. IEEE IEDM

Ghetti A et al (2005) 3D simulation study of gate coupling and gate cross-interference in advanced floating gate non-volatile memories. Solid State Electron 49(11):1805CrossRef

Goda A et al (2012) Scaling directions for 2-D and 3-D NAND cells. IEEE IEDM

Greg Wong Forward-Insights.com

Harari E (1978) Electrically erasable non-volatile semiconductor memory. US patent 4,115,914

Ho C et al (2008) Improvement of interpoly dielectric characteristics by plasma nitridation and oxidation for future NAND Flash memory. IEEE EDL, New York, NY, p 1199

Hou T-H (2007) Design optimization of metal nanocrystal memory, part I: nanocrystal array engineering. IEEE TED 53(12):3095–3102CrossRef

Huff H et al (2005) High dielectric constant materials. Springer, New York, NY, pp 37–38CrossRef

Jung T-S (1996) A 117-mm² 3.3-V only 128-Mb multilevel NAND Flash memory for mass storage. IEEE JSSC 31(11):1575

Jung S et al (2008) Modeling of Vth shift in NAND Flash-memory cell device considering crosstalk and short channel effects. IEEE TRED, New York, NY, p 1020

Kahng D et al (1967) A Floating Gate and its Application to Memory Device. Bell Syst Tech J 46:1288CrossRef

Kawagoe H et al (1976) Minimum size ROM structure compatible with silicon-gate E/D MOS LSI. IEEE JSSSC. IEEE, New York, NY, p 360

Kawamoto. http://www.ieeeghn.org/wiki/index.php/Special:Search?ns0=1&limit=20&offset=0&ns6=1&ns100=1&ns102=1&ns108=1&ns110=1&ns112=1&ns12=1&ns14=1&fulltext=Search&searchx=Search&search=masuoka+NAND+flash&x=78&y=7

Kim K (2010) Hot chips memory seminar. Samsung, Seoul

Kurata H et al (2007) Random telegraph signal in Flash memory: it’s impact of scaling of multilevel flash memory beyond the 90-nm node. IEEE JSSC, New York, NY, p 1362

Lacaze et al (2014) Non-volatile memories ITSE Wiley London UK

Lee J (2004) Effects of interface trap generation and annihilation on the data retention characteristics of Flash memory cells. IEEE TDMR, March, p 110

Lee J et al (2002) Effects of floating-gate interference on NAND Flash memory cell operation. IEEE EDL, IEEE, New York, NY, p 264

Lee CH et al (2006) Charge trapping memory cell of TANOS (si-oxide-SiN-Al₂O₃-TaN) structure compatible to conventional NAND Flash memory. IEEE NVSMW, p 31

Liu C et al (2009) New program disturb phenomenon induced by background data pattern in MLC NAND Flash memory. IEEE IMW

Lue H-T et al (2005) BE-SONOS: a bandgap engineered SONOS with excellent performance and reliability. IEDM, 22 Mar 2005

Masuoka F et al (1987) New ultra high density EPROM and Flash EEPROM with NAND structure cell. IEDM. IEEE, New York, NY, pp 552–555

Micheloni R et al (2010) Inside NAND Flash memories. Springer, New York, NYCrossRef

Mielke N et al (2006) Recovery effects in the distributed cycling of flash memories. IEEE IRPS, p 29

Mukerjee S et al (1987) Single transistor electrically programmable memory device and method. US Patent, 4,698,787

Mukherjee S et al (1985) A single transistor EEPROM cell and its implementation in a 512K CMOS EEPROM, IEDM, p 616

Muller R et al (1977) An 8192-bit electrically alterable ROM employing a one-transistor cell with floating gate, IEEE JSSC 12(10):507

Muralidhar R et al (2003) A 6V embedded 90 nm silicon nanocrystal nonvolatile memory. IEEE, IEDM, pp 601–604

Okuyama Y et al (1998) Monte Carlo simulation of stress-induced leakage current by hopping conduction via multi-traps in oxide. IEEE IEDM, p 905

Park Y et al (2006) Highly manufacturable 32Gb multi-level NAND Flash memory with .0098 μm² cell size using TANOS (Si-Oxide-Al203-TaN) cell technology. IEEE IEDM

Prall K (2007) Scaling non-volatile memory below 30 nm. IEEE NVSMW, p 5

Prall K (2011) New functional materials and emerging device architectures for nonvolatile memories. MRS Proc 1337

Prall K et al (2010) 25 nm 64 Gb MLC NAND technology and scaling challenges. IEEE IEDM

Raghunathan S et al (2009) Investigation of ballistic current in scaled floating-gate NAND Flash and a solution. IEEE IEDM, p 819

Ramaswamy N et al (2013) Engineering a planar NAND cell scalable to 20 nm and beyond. IEEE IMW, p 5

Ramkumar K et al (2013) A scalable, low voltage, low cost SONOS Memory technology for embedded NVM applications. IEEE IMW, pp 199–202

Reid D et al (2009) Analysis of threshold voltage distribution due to random dopants: a 100000 – sample 3-D simulation study. IEEE TRED, New York, NY, p 2255

Richter D (2013) Flash memories: economic principles of performance, cost and reliability optimization. Springer, New York, NY

Tanaka H et al (2007) Bit cost scalable technology with punch and plug process for ultra high density flash memory. VLSI Symp Tech Dig, pp 14–15

Tega N et al (2006) Anomalously large threshold voltage fluctuation by complex random telegraph signal in floating gate Flash memory. IEEE IEDM

Torsi A (2011) A program disturb model and channel leakage current study for sub-20 nm NAND Flash cells. IEEE TRED 58:11CrossRef

Wang H et al (2009) A new read-disturb failure mechanism caused by boosting hot-carrier injection effect in MLC NAND Flash. IEEE IMW

Waser R (2008) Nanotechnology, vol 3. Wiley, New York, NY

Wegener H (1967) The variable threshold transistor, a new electrically alterable non destructive read-only device. IEEE IEDM

White M et al (2004) Characterization of scaled SONOS EEPROM memory devices for space and military systems. IEEE NVMT, p 51–59

Wikipedia.

Yaegashi T et al (2009) 20 nm-node planar MONOS cell technology for multi-level NAND Flash memory. VLSI Tech, pp 190–191

Titel: A Synopsis on the State of the Art of NAND Memories
verfasst von: Kirk Prall
Nirmal Ramaswamy
Akira Goda
Verlag: Springer International Publishing
Buch: Charge-Trapping Non-Volatile Memories
Print ISBN: 978-3-319-15289-9

Electronic ISBN: 978-3-319-15290-5

Copyright-Jahr: 2015
DOI: https://doi.org/10.1007/978-3-319-15290-5_2

Premium Partner

Marktübersichten

Die im Laufe eines Jahres in der „adhäsion“ veröffentlichten Marktübersichten helfen Anwendern verschiedenster Branchen, sich einen gezielten Überblick über Lieferantenangebote zu verschaffen.

Zur Marktübersicht

Springer Professional

Abstract

Bitte loggen Sie sich ein, um Zugang zu Ihrer Lizenz zu erhalten.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Springer Professional "Technik"

Springer Professional "Wirtschaft"

Premium Partner

Marktübersichten