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Journal of Computational Electronics

Erschienen in:

11.07.2023

Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials

verfasst von: Adel M’foukh, Jérôme Saint-Martin, Philippe Dollfus, Marco Pala

Erschienen in: Journal of Computational Electronics | Ausgabe 5/2023

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Abstract

We present a first-principles model to study tunnel transistors based on van der Waals heterojunctions of 2D materials in the presence of dissipative mechanisms due to the electron–phonon interaction. To this purpose, we employed a reduced basis set composed of unit-cell restricted Bloch functions computed with a plane wave ab-initio solver and performed self-consistent quantum transport simulations within the non-equilibrium Green’s functions formalism. Phonon scattering was included with specific self-energies making use of the deformation potential approximation for the electron–phonon coupling. Our simulations identify the van der Waals tunnel FET as a promising option to attain high on-state currents at low supply voltages, but also show a strong impact of the phonon scattering on the transport properties of such device in the sub-threshold regime.

Vorheriger Artikel Monte Carlo study of carrier transport in two-dimensional transition metal dichalcogenides: high-field characteristics and MOSFET simulation

Nächster Artikel Electronic transport computation in thermoelectric materials: from ab initio scattering rates to nanostructures

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Titel: Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials
verfasst von: Adel M’foukh
Jérôme Saint-Martin
Philippe Dollfus
Marco Pala
Publikationsdatum: 11.07.2023
Verlag: Springer US
Erschienen in: Journal of Computational Electronics / Ausgabe 5/2023
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-023-02080-2

Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite

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Ab-initio simulation of dissipative transport in tunnel devices based on heterostructures of 2D materials

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