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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 1/2017

03.01.2017

Accuracy balancing for the finite-difference-based solution of the discrete Wigner transport equation

verfasst von: Kyoung-Youm Kim, Saehwa Kim, Ting-wei Tang

Erschienen in: Journal of Computational Electronics | Ausgabe 1/2017

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Abstract

The Wigner transport equation based on the Wigner function which is defined on the phase space describes two actions in orthogonal directions of the phase space: movement (diffusion) in position space and transition in momentum space. Here, we show that for the proper analysis of a resonant tunneling diode using the finite-difference-based solution of the Wigner transport equation, the degree of numerical accuracy in the calculation of the movement in position space should be balanced with that in the evaluation of the transition in momentum space.
Vorheriger Artikel Design of plasmonic half-adder and half-subtractor circuits employing nonlinear effect in Mach–Zehnder interferometer
Nächster Artikel Nanoscale circuit implementation using tri-metal gate engineered nanowire MOSFET with gate stack for analog/RF applications

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Literatur
1.
Frensley, W.R.: Boundary conditions for open quantum systems driven far from equilibrium. Rev. Mod. Phys. 62, 745–791 (1990)CrossRef
2.
Jacoboni, C., Bordone, P.: The Wigner-function approach to non-equilibrium electron transport. Rep. Prog. Phys. 67, 1033–1071 (2004)CrossRef
3.
Frensley, W.R.: Wigner-function model of a resonant-tunneling semiconductor device. Phys. Rev. B 36, 1570–1580 (1987)CrossRef
4.
Mains, R.K., Haddad, G.I.: Wigner function modeling of resonant tunneling diodes with high peak-to-valley ratios. J. Appl. Phys. 64, 5041–5044 (1988)CrossRef
5.
Kluksdahl, N.C., Kriman, A.M., Ferry, D.K., Ringhofer, C.: Self-consistent study of the resonant-tunneling diode. Phys. Rev. B 39, 7720–7735 (1989)CrossRef
6.
Jensen, K.L., Buot, F.A.: Numerical aspects on the simulation of I–V characteristics and switching times of resonant tunneling diodes. J. Appl. Phys. 67, 2153–2155 (1990)CrossRef
7.
Buot, F.A., Jensen, K.L.: Lattice Weyl-Wigner formulation of exact many-body quantum-transport theory and applications to novel solid-state quantum-based devices. Phys. Rev. B 42, 9429–9457 (1990)CrossRef
8.
Jensen, K.L., Buot, F.A.: Numerical simulation of intrinsic bistability and high-frequency current oscillations in resonant tunneling structures. Phys. Rev. Lett. 66, 1078–1081 (1991)CrossRef
9.
Tsuchiya, H., Ogawa, M., Miyoshi, T.: Simulation of quantum transport in quantum devices with spatially varying effective mass. IEEE Trans. Electron Devices 38, 1246–1252 (1991)CrossRef
10.
Mains, R.K., Haddad, G.I.: An accurate re-formulation of the Wigner function method for quantum transport modeling. J. Comput. Phys. 112, 149–161 (1994)CrossRefMATH
11.
Kim, K.-Y., Lee, B.: On the high order numerical calculation schemes for the Wigner transport equation. Solid-State Electron. 43, 2243–2245 (1999)CrossRef
12.
Zaccaria, R.P., Rossi, F.: On the problem of generalizing the semiconductor Bloch equation from a closed to an open system. Phys. Rev. B 67, 113311 (2003)CrossRef
13.
Kim, K.-Y.: A discrete formulation of the Wigner transport equation. J. Appl. Phys. 102, 113705 (2007)CrossRef
14.
Kim, K.-Y.: Nonuniform mesh application to discrete Wigner transport equation. Jpn. J. Appl. Phys. 47, 358–360 (2008)CrossRef
15.
Costolanski, A.S., Kelley, C.T.: Efficient solution of the Wigner–Poisson equations for modeling resonant tunneling diodes. IEEE Trans. Nanotechnol. 9, 708–715 (2010)CrossRef
16.
Kim, K.-Y., Kim, S.: Effect of uncertainty principle on the Wigner function-based simulation of quantum transport. Solid-State Electron. 111, 22–26 (2015)CrossRef
17.
Schulz, D., Mahmood, A.: Approximation of a phase space operator for the numerical solution of the Wigner equation. J. Quantum Electron. 52, 8700109 (2016)CrossRef
18.
Kim, K.-Y., Kim, J., Kim, S.: An efficient numerical scheme for the discrete Wigner transport equation via the momentum domain narrowing. AIP Adv. 6, 065314 (2016)CrossRef
19.
Tsuchiya, H., Ogawa, M., Miyoshi, T.: Quantum-mechanical simulation of electron waveguides in linear and nonlinear transport regimes. IEEE Trans. Electron Devices 39, 2465–2471 (1992)CrossRef
20.
Gehring, A., Kosina, H.: Wigner function-based simulation of quantum transport in scaled DG-MOSFETs using a Monte Carlo method. J. Comput. Electron. 4, 67–70 (2005)CrossRef
21.
Kefi-Ferhane, J., Poncet, A.: Deterministic simulation of transport in MOSFETs by coupling Wigner, Poisson and Schrödinger equations. Phys. Status Solidi A 205, 2518–2521 (2008)CrossRef
22.
Barraud, S.: Phase-coherent quantum transport in silicon nanowires based on Wigner transport equation: comparison with the nonequilibrium-Green-function formalism. J. Appl. Phys. 106, 063714 (2009)CrossRef
23.
Yamada, Y., Tsuchiya, H., Ogawa, M.: Quantum transport simulation of silicon-nanowire transistors based on direct solution approach of the Wigner transport equation. IEEE Trans. Electron Devices 56, 1396–1401 (2009)CrossRef
24.
Barraud, S.: Dissipative quantum transport in silicon nanowires based on Wigner transport equation. J. Appl. Phys. 110, 093710 (2011)CrossRef
25.
Poli, S., Pala, M., Poiroux, T., Deleonibus, S., Baccarani, G.: Size dependence of surface-roughness-limited mobility in silicon-nanowire FETs. IEEE Trans. Electron Devices 55, 2968–2976 (2008)CrossRef
26.
Seoane, N., Martinez, A., Brown, A.R., Barker, J.R., Asenov, A.: Current variability in Si nanowire MOSFETs due to random dopants in the source/drain regions: a fully 3-D NEGF simulation study. IEEE Trans. Electron Devices 56, 1388–1395 (2009)CrossRef
27.
Sellier, J.M., Nedjalkov, M., Dimov, I., Selberherr, S.: A benchmark study of the Wigner Monte Carlo method. Monte Carlo Methods Appl. 20, 43–51 (2014)MathSciNetCrossRefMATH
28.
Ringhofer, C.: A spectral method for the numerical simulation of quantum tunneling phenomena. SIAM J. Numer. Anal. 27, 32–50 (1990)MathSciNetCrossRefMATH
29.
Arnold, A., Ringhofer, C.: An operator splitting method for the Wigner–Poisson problem. SIAM J. Numer. Anal. 33, 1622–1643 (1996)MathSciNetCrossRefMATH
30.
Dorda, A., Schürrer, F.: A WENO-solver combined with adaptive momentum discretization for the Wigner transport equation and its application to resonant tunneling diodes. J. Comput. Phys. 284, 95–116 (2015)MathSciNetCrossRefMATH
31.
Cervenka, J., Ellinghaus, P., Nedjalkov, M.: Deterministic solution of the discrete Wigner equation. In: Dimov, I., Fidanova, S., Lirkov, I. (eds.) Numerical Methods and Applications, pp. 149–156. Springer International Publishing, Berlin (2015)
32.
Ellinghaus, P.: Two-dimensional Wigner Monte Carlo simulation for time-resolved quantum transport with scattering. Ph.D. dissertation, Technische Universität Wien (2016)
33.
Bertoni, A., Bordone, P., Brunetti, R., Jacoboni, C.: The Wigner function for electron transport in mesoscopic systems. J. Phys. Condens. Matter 11, 5999–6012 (1999)CrossRef
34.
Shifren, L., Ringhofer, C., Ferry, D.K.: A Wigner function-based quantum ensemble Monte Carlo study of a resonant tunneling diode. IEEE Trans. Electron Devices 50, 769–773 (2003)CrossRef
35.
Nedjalkov, M., Kosina, H., Selberherr, S., Ringhofer, C., Ferry, D.K.: Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices. Phys. Rev. B 70, 115319 (2004)CrossRef
36.
Querlioz, D., Nguyen, H.-N., Saint-Martin, J., Bournel, A., Galdin-Retailleau, S., Dollfus, P.: Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport. J. Comput. Electron. 8, 324–335 (2009)CrossRef
37.
Ellinghaus, P., Weinbub, J., Nedjalkov, M., Selberherr, S., Dimov, I.: Distributed-memory parallelization of the Wigner Monte Carlo method using spatial domain decomposition. J. Comput. Electron. 14, 151–162 (2015)CrossRef
38.
Weinbub, J., Ellinghaus, P., Nedjalkov, M.: Domain decomposition strategies for the two-dimensional Wigner Monte Carlo method. J. Comput. Electron. 14, 922–929 (2015)CrossRef
39.
Jacoboni, C., Bordone, P.: Wigner transport equation with finite coherence length. J. Comput. Electron. 13, 257–263 (2014)
40.
Savio, A., Poncet, A.: Study of the boundary conditions of the Wigner function computed by solving the Schrödinger equation. Int. J. Adv. Syst. Meas. 3, 99–109 (2010)
41.
Savio, A., Poncet, A.: Study of the Wigner function at the device boundaries in one-dimensional single- and double-barrier structures. J. Appl. Phys. 109, 033713 (2011)CrossRef
42.
Jiang, H., Lu, T., Cai, W.: A device adaptive inflow boundary condition for Wigner equations of quantum transport. J. Comput. Phys. 258, 773–786 (2014)MathSciNetCrossRefMATH
43.
Jonsson, B., Eng, S.T.: Solving the Schrödinger equation in arbitrary quantum-well potential profiles using the transfer matrix method. IEEE J. Quantum Electron. 26, 2025–2035 (1990)CrossRef
Metadaten
Titel
Accuracy balancing for the finite-difference-based solution of the discrete Wigner transport equation
verfasst von
Kyoung-Youm Kim
Saehwa Kim
Ting-wei Tang
Publikationsdatum
03.01.2017
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 1/2017
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-016-0944-9

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