Skip to main content

2019 | OriginalPaper | Buchkapitel

3. ALD Al-doped ZnO Thin Film as Semiconductor and Piezoelectric Material: Process Synthesis

verfasst von : Ayman Rezk, Irfan Saadat

Erschienen in: The IoT Physical Layer

Verlag: Springer International Publishing

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

Since the first demonstration of an integrated circuit in 1958, the ambitious semiconductor technology has been racing for almost six decades to change the face of the Earth. Moore’s Law and the ‘virtuous cycle’ of investment, scaling and market growth have fueled the sweeping influence that the semiconductor industry now has on every aspect of our everyday lives and the global economic system. Thanks to the striking drop in the cost of computing power, from 5.52 US dollars for a single transistor in 1954 to a billionth of a dollar in 2016, countless human dreams have been realized; from the Apollo missions to the AI and social networking era. While the continued scaling of traditional complementary metal–oxide–semiconductor (CMOS) devices took over the market with its impressive progress, another paradigm of electronics has taken shape: flexible electronics. Instead of focusing on shrinking critical dimensions and reducing power consumption, the growing field of flexible electronics rather aims to leverage compliant form factors and lightweight designs to usher radically novel electronic devices into our lives. Flexible displays, electronic textiles, bio-inspired sensors, and wearable or implantable medical devices, just to name a few, are out-of-reach applications for the rigid form factor of conventional wafer-based electronics. Flexible electronics is more than just a fill-in or an alternative for where conventional electronics fall short. If the integrated circuit was the game changer of the twentieth century, then flexible electronics is the catalyst for the paradigm shift of the twenty-first century.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Literatur
1.
Zurück zum Zitat C.H. Ahn, H. Kim, H.K. Cho, Deposition of Al doped ZnO layers with various electrical types by atomic layer deposition. Thin Solid Films 519(2), 747–750 (2010)CrossRef C.H. Ahn, H. Kim, H.K. Cho, Deposition of Al doped ZnO layers with various electrical types by atomic layer deposition. Thin Solid Films 519(2), 747–750 (2010)CrossRef
2.
Zurück zum Zitat C.H. Ahn, J.H. Kim, H.K. Cho, Tunable electrical and optical properties in composition controlled Hf:ZnO thin films grown by atomic layer deposition. J. Electrochem. Soc. 159(4), H384–H387 (2012)CrossRef C.H. Ahn, J.H. Kim, H.K. Cho, Tunable electrical and optical properties in composition controlled Hf:ZnO thin films grown by atomic layer deposition. J. Electrochem. Soc. 159(4), H384–H387 (2012)CrossRef
3.
Zurück zum Zitat C.H. Ahn, B.H. Kong, H. Kim, H.K. Cho, Improved electrical stability in the Al Doped ZnO thin-film-transistors grown by atomic layer deposition. J. Electrochem. Soc. 158(2), H170 (2011)CrossRef C.H. Ahn, B.H. Kong, H. Kim, H.K. Cho, Improved electrical stability in the Al Doped ZnO thin-film-transistors grown by atomic layer deposition. J. Electrochem. Soc. 158(2), H170 (2011)CrossRef
4.
Zurück zum Zitat A.F. Aktaruzzaman, G.L. Sharma, L.K. Malhotra, Electrical, optical and annealing characteristics of ZnO: al films prepared by spray pyrolysis. Thin Solid Films 198(1–2), 67–74 (1991)CrossRef A.F. Aktaruzzaman, G.L. Sharma, L.K. Malhotra, Electrical, optical and annealing characteristics of ZnO: al films prepared by spray pyrolysis. Thin Solid Films 198(1–2), 67–74 (1991)CrossRef
5.
Zurück zum Zitat H.S. Bae, S. Im, Ultraviolet detecting properties of ZnO-based thin film transistors. Thin Solid Films 469–470(SPEC. ISS), 75–79 (2004)CrossRef H.S. Bae, S. Im, Ultraviolet detecting properties of ZnO-based thin film transistors. Thin Solid Films 469–470(SPEC. ISS), 75–79 (2004)CrossRef
6.
Zurück zum Zitat P.F. Carcia, R.S. McLean, M.H. Reilly, G. Nunes, Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering. Appl. Phys. Lett. 82(7), 1117–1119 (2003)CrossRef P.F. Carcia, R.S. McLean, M.H. Reilly, G. Nunes, Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering. Appl. Phys. Lett. 82(7), 1117–1119 (2003)CrossRef
7.
Zurück zum Zitat P.R. Chalker, P.A. Marshall, P.J. King, K. Dawson, S. Romani, P.A. Williams, J. Ridealgh, M.J. Rosseinsky, Atomic layer deposition of germanium-doped zinc oxide films with tuneable ultraviolet emission. J. Mater. Chem. 22(25), 12824–12829 (2012)CrossRef P.R. Chalker, P.A. Marshall, P.J. King, K. Dawson, S. Romani, P.A. Williams, J. Ridealgh, M.J. Rosseinsky, Atomic layer deposition of germanium-doped zinc oxide films with tuneable ultraviolet emission. J. Mater. Chem. 22(25), 12824–12829 (2012)CrossRef
8.
Zurück zum Zitat P.R. Chalker, P.A. Marshall, S. Romani, J.W. Roberts, S.J.C. Irvine, D.A. Lamb, A.J. Clayton, P. Williams, Atomic layer deposition of Ga-doped ZnO transparent conducting oxide substrates for CdTe-based photovoltaics. J. Vac. Sci. Technol. A 31(1), 01A120 (2013)CrossRef P.R. Chalker, P.A. Marshall, S. Romani, J.W. Roberts, S.J.C. Irvine, D.A. Lamb, A.J. Clayton, P. Williams, Atomic layer deposition of Ga-doped ZnO transparent conducting oxide substrates for CdTe-based photovoltaics. J. Vac. Sci. Technol. A 31(1), 01A120 (2013)CrossRef
9.
Zurück zum Zitat C.H. Chen, S.J. Chang, S.P. Chang, M.J. Li, I. Cherng Chen, T.J. Hsueh, A. Di Hsu, C.L. Hsu, Fabrication of a white-light-emitting diode by doping gallium into zno nanowire on a p-gan substrate. J. Phys. Chem. 114(29), 12422–12426 (2010) C.H. Chen, S.J. Chang, S.P. Chang, M.J. Li, I. Cherng Chen, T.J. Hsueh, A. Di Hsu, C.L. Hsu, Fabrication of a white-light-emitting diode by doping gallium into zno nanowire on a p-gan substrate. J. Phys. Chem. 114(29), 12422–12426 (2010)
10.
Zurück zum Zitat N.P. Dasgupta, S. Neubert, W. Lee, O. Trejo, J.R. Lee, F.B. Prinz, Atomic layer deposition of Al-doped ZnO films: effect of grain orientation on conductivity. Chem. Mater. 22(16), 4769–4775 (2010)CrossRef N.P. Dasgupta, S. Neubert, W. Lee, O. Trejo, J.R. Lee, F.B. Prinz, Atomic layer deposition of Al-doped ZnO films: effect of grain orientation on conductivity. Chem. Mater. 22(16), 4769–4775 (2010)CrossRef
11.
Zurück zum Zitat E.A. Davis, S.P. Cottrell, P.J. King, J.S. Lord, J.M. Gil, H.V. Alberto, R.C. Vilão, J. Piroto Duarte, N. Ayres de Campos, A. Weidinger, R.L. Lichti, S.J. Irvine, S.F. Cox, S.F. Cox, Experimental confirmation of the predicted shallow donor hydrogen state in zinc oxide. Phys. Rev. Lett. 86(12), 2601–2604 (2001)CrossRef E.A. Davis, S.P. Cottrell, P.J. King, J.S. Lord, J.M. Gil, H.V. Alberto, R.C. Vilão, J. Piroto Duarte, N. Ayres de Campos, A. Weidinger, R.L. Lichti, S.J. Irvine, S.F. Cox, S.F. Cox, Experimental confirmation of the predicted shallow donor hydrogen state in zinc oxide. Phys. Rev. Lett. 86(12), 2601–2604 (2001)CrossRef
12.
Zurück zum Zitat T. Dhakal, D. Vanhart, R. Christian, A. Nandur, A. Sharma, C.R. Westgate, Growth morphology and electrical/optical properties of Al-doped ZnO thin films grown by atomic layer deposition. J. Vac. Sci. Technol. A: Vac. Surf. Films 30(2), 021202 (2012)CrossRef T. Dhakal, D. Vanhart, R. Christian, A. Nandur, A. Sharma, C.R. Westgate, Growth morphology and electrical/optical properties of Al-doped ZnO thin films grown by atomic layer deposition. J. Vac. Sci. Technol. A: Vac. Surf. Films 30(2), 021202 (2012)CrossRef
13.
Zurück zum Zitat J.W. Elam, D. Routkevitch, S.M. George, Properties of ZnO/Al\(_2\)O\(_3\) alloy films grown using atomic layer deposition techniques. J. Electrochem. Soc. 150(6), G339 (2003) J.W. Elam, D. Routkevitch, S.M. George, Properties of ZnO/Al\(_2\)O\(_3\) alloy films grown using atomic layer deposition techniques. J. Electrochem. Soc. 150(6), G339 (2003)
14.
Zurück zum Zitat J.W. Elam, Z.A. Sechrist, S.M. George, ZnO/Al\(_2\)O\(_3\) nanolaminates fabricated by atomic layer deposition: growth and surface roughness measurements. Thin Solid Films 414(1), 43–55 (2002) J.W. Elam, Z.A. Sechrist, S.M. George, ZnO/Al\(_2\)O\(_3\) nanolaminates fabricated by atomic layer deposition: growth and surface roughness measurements. Thin Solid Films 414(1), 43–55 (2002)
15.
Zurück zum Zitat J.W. Elam, D.A. Baker, A.B.F. Martinson, M.J. Pellin, J.T. Hupp, Atomic layer deposition of indium tin oxide thin films using nonhalogenated precursors. J. Phys. Chem. C 112(6), 1938–1945 (2008) J.W. Elam, D.A. Baker, A.B.F. Martinson, M.J. Pellin, J.T. Hupp, Atomic layer deposition of indium tin oxide thin films using nonhalogenated precursors. J. Phys. Chem. C 112(6), 1938–1945 (2008)
16.
Zurück zum Zitat P. Ericsson, S. Bengtsson, J. Skarp, Properties of Al203-films deposited on silicon by atomic layer epitaxy. Microelectron. Eng. 36(1–4):91–94 (1997) P. Ericsson, S. Bengtsson, J. Skarp, Properties of Al203-films deposited on silicon by atomic layer epitaxy. Microelectron. Eng. 36(1–4):91–94 (1997)
17.
Zurück zum Zitat S. Faÿ, J. Steinhauser, S. Nicolay, C. Ballif, Polycrystalline ZnO: B grown by LPCVD as TCO for thin film silicon solar cells. Thin Solid Films 518(11), 2961–2966 (2010)CrossRef S. Faÿ, J. Steinhauser, S. Nicolay, C. Ballif, Polycrystalline ZnO: B grown by LPCVD as TCO for thin film silicon solar cells. Thin Solid Films 518(11), 2961–2966 (2010)CrossRef
18.
Zurück zum Zitat S. Faÿ, J. Steinhauser, N. Oliveira, E. Vallat-Sauvain, C. Ballif, Opto-electronic properties of rough LP-CVD ZnO: B for use as TCO in thin-film silicon solar cells. Thin Solid Films 515(24 SPEC. ISS.), 8558–8561 (2007) S. Faÿ, J. Steinhauser, N. Oliveira, E. Vallat-Sauvain, C. Ballif, Opto-electronic properties of rough LP-CVD ZnO: B for use as TCO in thin-film silicon solar cells. Thin Solid Films 515(24 SPEC. ISS.), 8558–8561 (2007)
19.
Zurück zum Zitat Y. Geng, L. Guo, S.S. Xu, Q.-Q. Sun, S.-J. Ding, H.-L. Lu, D.W. Zhang, Influence of Al doping on the properties of ZnO thin films grown by atomic layer deposition. J. Phys. Chem. C 115(25), 12317–12321 (2011) Y. Geng, L. Guo, S.S. Xu, Q.-Q. Sun, S.-J. Ding, H.-L. Lu, D.W. Zhang, Influence of Al doping on the properties of ZnO thin films grown by atomic layer deposition. J. Phys. Chem. C 115(25), 12317–12321 (2011)
20.
Zurück zum Zitat V. Gokulakrishnan, S. Parthiban, K. Jeganathan, K. Ramamurthi, Investigation on the effect of Zr doping in ZnO thin films by spray pyrolysis. Appl. Surf. Sci. 257(21), 9068–9072 (2011)CrossRef V. Gokulakrishnan, S. Parthiban, K. Jeganathan, K. Ramamurthi, Investigation on the effect of Zr doping in ZnO thin films by spray pyrolysis. Appl. Surf. Sci. 257(21), 9068–9072 (2011)CrossRef
21.
Zurück zum Zitat L.G. Gosset, J.F. Damlencourt, O. Renault, D. Rouchon, A. Ph Holliger, I. Ermolieff, J.J. Trimaille, F.M. Ganem, M.N. Séméria, Interface and material characterization of thin Al\(_2\)O\(_3\) layers deposited by ALD using TMA/H2O. J. Non-Cryst. Solids 303(1), 17–23 (2002) L.G. Gosset, J.F. Damlencourt, O. Renault, D. Rouchon, A. Ph Holliger, I. Ermolieff, J.J. Trimaille, F.M. Ganem, M.N. Séméria, Interface and material characterization of thin Al\(_2\)O\(_3\) layers deposited by ALD using TMA/H2O. J. Non-Cryst. Solids 303(1), 17–23 (2002)
22.
Zurück zum Zitat P. Guay, S. Gorgutsa, S. LaRochelle, Y. Messaddeq, Wearable contactless respiration sensor based on multi-material fibers integrated into textile. Sensors 17(5), 1050 (2017)CrossRef P. Guay, S. Gorgutsa, S. LaRochelle, Y. Messaddeq, Wearable contactless respiration sensor based on multi-material fibers integrated into textile. Sensors 17(5), 1050 (2017)CrossRef
23.
Zurück zum Zitat P.Q. Jiaping, M. Han, A.M R Senos, Effect of A1 and Mn doping on the electrical conductivity of ZnO. Journal of the European Ceramic Society 21(10–11), 1883–1886 (2001) P.Q. Jiaping, M. Han, A.M R Senos, Effect of A1 and Mn doping on the electrical conductivity of ZnO. Journal of the European Ceramic Society 21(10–11), 1883–1886 (2001)
24.
Zurück zum Zitat D.M. Hofmann, A. Hofstaetter, F. Leiter, H. Zhou, F. Henecker, B.K. Meyer, S.B. Orlinskii, J. Schmidt, P.G. Baranov, Hydrogen: a relevant shallow donor in Zinc Oxide. Phys. Rev. Lett. 88(4), 045504 (2002)CrossRef D.M. Hofmann, A. Hofstaetter, F. Leiter, H. Zhou, F. Henecker, B.K. Meyer, S.B. Orlinskii, J. Schmidt, P.G. Baranov, Hydrogen: a relevant shallow donor in Zinc Oxide. Phys. Rev. Lett. 88(4), 045504 (2002)CrossRef
25.
Zurück zum Zitat H. Jianhua, R.G. Gordon, Textured aluminum-doped zinc oxide thin films from atmospheric pressure chemical-vapor deposition. J. Appl. Phys. 71(2), 880–890 (1992)CrossRef H. Jianhua, R.G. Gordon, Textured aluminum-doped zinc oxide thin films from atmospheric pressure chemical-vapor deposition. J. Appl. Phys. 71(2), 880–890 (1992)CrossRef
26.
Zurück zum Zitat C. Huang, M. Wang, Z. Deng, Y. Cao, Q. Liu, Z. Huang, Y. Liu, W. Guo, Q. Huang, Low content indium-doped zinc oxide films with tunable work function fabricated through magnetron sputtering. Semicond. Sci. Technol. 25(4), 45008 (2010)CrossRef C. Huang, M. Wang, Z. Deng, Y. Cao, Q. Liu, Z. Huang, Y. Liu, W. Guo, Q. Huang, Low content indium-doped zinc oxide films with tunable work function fabricated through magnetron sputtering. Semicond. Sci. Technol. 25(4), 45008 (2010)CrossRef
27.
Zurück zum Zitat J. Huang, S. Chu, J. Kong, L. Zhang, C.M. Schwarz, G. Wang, L. Chernyak, Z. Chen, J. Liu, ZnO p-n homojunction random laser diode based on nitrogen-doped p-type nanowires. Adv. Opt. Mater. 1(2), 179–185 (2013)CrossRef J. Huang, S. Chu, J. Kong, L. Zhang, C.M. Schwarz, G. Wang, L. Chernyak, Z. Chen, J. Liu, ZnO p-n homojunction random laser diode based on nitrogen-doped p-type nanowires. Adv. Opt. Mater. 1(2), 179–185 (2013)CrossRef
28.
Zurück zum Zitat Ihs. Revenues from Flexible AMOLED Display on Pace to Exceed Rigid AMOLED Panel in Q3 2017 Ihs. Revenues from Flexible AMOLED Display on Pace to Exceed Rigid AMOLED Panel in Q3 2017
29.
Zurück zum Zitat S. Ilican, Y. Caglar, M. Caglar, B. Demirci, Polycrystalline indium-doped ZnO thin films: preparation and characterization. J. Optoelectron. Adv. Mater. 10(10), 2592–2598 (2008) S. Ilican, Y. Caglar, M. Caglar, B. Demirci, Polycrystalline indium-doped ZnO thin films: preparation and characterization. J. Optoelectron. Adv. Mater. 10(10), 2592–2598 (2008)
30.
Zurück zum Zitat X. Jiang, F.L. Wong, M.K. Fung, S.T. Lee, Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices. Appl. Phys. Lett. 83(9):1875–1877 (2003) X. Jiang, F.L. Wong, M.K. Fung, S.T. Lee, Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices. Appl. Phys. Lett. 83(9):1875–1877 (2003)
31.
Zurück zum Zitat S.K. Kim, C.S. Hwang, S.-H. Ko Park, S.J. Yun, Comparison between ZnO films grown by atomic layer deposition using H\(_2\)O or O\(_3\) as oxidant. Thin Solid Films 478(1—-2), 103–108 (2005) S.K. Kim, C.S. Hwang, S.-H. Ko Park, S.J. Yun, Comparison between ZnO films grown by atomic layer deposition using H\(_2\)O or O\(_3\) as oxidant. Thin Solid Films 478(1—-2), 103–108 (2005)
32.
Zurück zum Zitat E.H. Kim, D.H. Lee, B.H. Chung, H.S. Kim, Y. Kim, S.J. Noh, Low-temperature growth of ZnO thin films by atomic layer deposition. J. Korean Phys. Soc. 50(6), 1716 (2007)CrossRef E.H. Kim, D.H. Lee, B.H. Chung, H.S. Kim, Y. Kim, S.J. Noh, Low-temperature growth of ZnO thin films by atomic layer deposition. J. Korean Phys. Soc. 50(6), 1716 (2007)CrossRef
33.
Zurück zum Zitat H. Kim, A. Piqué, J.S. Horwitz, H. Murata, Z.H. Kafafi, C.M. Gilmore, D.B. Chrisey, Effect of aluminum doping on zinc oxide thin films grown by pulsed laser deposition for organic light-emitting devices. Thin Solid Films 377–378, 798–802 (2000)CrossRef H. Kim, A. Piqué, J.S. Horwitz, H. Murata, Z.H. Kafafi, C.M. Gilmore, D.B. Chrisey, Effect of aluminum doping on zinc oxide thin films grown by pulsed laser deposition for organic light-emitting devices. Thin Solid Films 377–378, 798–802 (2000)CrossRef
34.
Zurück zum Zitat K. Ching-Shun, H.-Y. Lee, J.-M. Huang, C.-M. Lin, Epitaxial growth of ZnO films at extremely low temperature by atomic layer deposition with interrupted flow. Mater. Chem. Phys. 120(2–3), 236–239 (2010) K. Ching-Shun, H.-Y. Lee, J.-M. Huang, C.-M. Lin, Epitaxial growth of ZnO films at extremely low temperature by atomic layer deposition with interrupted flow. Mater. Chem. Phys. 120(2–3), 236–239 (2010)
35.
Zurück zum Zitat D.-J. Lee, H.-M. Kim, J.-Y. Kwon, H. Choi, S.-H. Kim, K.-B. Kim, Structural and electrical properties of atomic layer deposited Al-doped ZnO films. Adv. Funct. Mater. 21(3):n/a–n/a (2010) D.-J. Lee, H.-M. Kim, J.-Y. Kwon, H. Choi, S.-H. Kim, K.-B. Kim, Structural and electrical properties of atomic layer deposited Al-doped ZnO films. Adv. Funct. Mater. 21(3):n/a–n/a (2010)
36.
Zurück zum Zitat D.-J. Lee, J.-Y. Kwon, S.-H. Kim, H.-M. Kim, K.-B. Kim, Effect of Al distribution on carrier generation of atomic layer deposited Al-doped ZnO films. J. Electrochem. Soc. 158(5), D277–D281 (2011)CrossRef D.-J. Lee, J.-Y. Kwon, S.-H. Kim, H.-M. Kim, K.-B. Kim, Effect of Al distribution on carrier generation of atomic layer deposited Al-doped ZnO films. J. Electrochem. Soc. 158(5), D277–D281 (2011)CrossRef
37.
Zurück zum Zitat Lenovo, Lenovo’s flexible phone and tablet Lenovo, Lenovo’s flexible phone and tablet
38.
Zurück zum Zitat LG, LG Display Unveils the Latest Cutting-edge Displays at CES (2015) LG, LG Display Unveils the Latest Cutting-edge Displays at CES (2015)
39.
Zurück zum Zitat LG, 49WFB | Transparent Special Display (2016) LG, 49WFB | Transparent Special Display (2016)
40.
Zurück zum Zitat S.J. Lim, S. Kwon, H. Kim, ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor. Thin Solid Films 516(7), 1523–1528 (2008) S.J. Lim, S. Kwon, H. Kim, ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor. Thin Solid Films 516(7), 1523–1528 (2008)
41.
Zurück zum Zitat Y.C. Lin, Y.C. Jian, J.H. Jiang, A study on the wet etching behavior of AZO (ZnO:Al) transparent conducting film. Appl. Surf. Sci. 254(9), 2671–2677 (2008)CrossRef Y.C. Lin, Y.C. Jian, J.H. Jiang, A study on the wet etching behavior of AZO (ZnO:Al) transparent conducting film. Appl. Surf. Sci. 254(9), 2671–2677 (2008)CrossRef
42.
Zurück zum Zitat Y. Liu, Y. Li, H. Zeng, ZnO-based transparent conductive thin films: doping, performance, and processing. J. Nanomater. 2013, 1–9 (2013) Y. Liu, Y. Li, H. Zeng, ZnO-based transparent conductive thin films: doping, performance, and processing. J. Nanomater. 2013, 1–9 (2013)
43.
Zurück zum Zitat V. Lujala, J. Skarp, M. Tammenmaa, T. Suntola, Atomic layer epitaxy growth of doped zinc oxide thin films from organometals. Appl. Surf. Sci. 82-83(C), 34–40 (1994) V. Lujala, J. Skarp, M. Tammenmaa, T. Suntola, Atomic layer epitaxy growth of doped zinc oxide thin films from organometals. Appl. Surf. Sci. 82-83(C), 34–40 (1994)
44.
Zurück zum Zitat O. Lupan, T. Pauporté, T. Le Bahers, B. Viana, I. Ciofini, Wavelength-emission tuning of zno nanowire-based light-emitting diodes by Cu doping: experimental and computational insights. Adv. Funct. Mater. 21(18), 3564–3572 (2011) O. Lupan, T. Pauporté, T. Le Bahers, B. Viana, I. Ciofini, Wavelength-emission tuning of zno nanowire-based light-emitting diodes by Cu doping: experimental and computational insights. Adv. Funct. Mater. 21(18), 3564–3572 (2011)
45.
Zurück zum Zitat W.J. Maeng, J. Seok Park, H. Suk Kim, Kwang Hee Lee, Kyung Bae Park, Kyoung Seok Son, Tae Sang Kim, Eok Su Kim, Yong Nam Ham, Myungkwan Ryu, and Sang Yoon Lee. Photo and thermal stability enhancement of amorphous Hf-In-Zn-O thin-film transistors by the modulation of back channel composition. Appl. Phys. Lett. 98(7), 073503 (2011) W.J. Maeng, J. Seok Park, H. Suk Kim, Kwang Hee Lee, Kyung Bae Park, Kyoung Seok Son, Tae Sang Kim, Eok Su Kim, Yong Nam Ham, Myungkwan Ryu, and Sang Yoon Lee. Photo and thermal stability enhancement of amorphous Hf-In-Zn-O thin-film transistors by the modulation of back channel composition. Appl. Phys. Lett. 98(7), 073503 (2011)
46.
Zurück zum Zitat T. Minami, H. Nanto, S. Takata, Optical properties of aluminum doped zinc oxide thin films prepared by rf magnetron sputtering. Jpn. J. Appl. Phys. 24(8), L605–L607 (1985)CrossRef T. Minami, H. Nanto, S. Takata, Optical properties of aluminum doped zinc oxide thin films prepared by rf magnetron sputtering. Jpn. J. Appl. Phys. 24(8), L605–L607 (1985)CrossRef
47.
Zurück zum Zitat A.W. Ott, R.P.H. Chang, Atomic layer-controlled growth of transparent conducting ZnO on plastic substrates. Mater. Chem. Phys. 58(2), 132–138 (1999)CrossRef A.W. Ott, R.P.H. Chang, Atomic layer-controlled growth of transparent conducting ZnO on plastic substrates. Mater. Chem. Phys. 58(2), 132–138 (1999)CrossRef
48.
Zurück zum Zitat A.W. Ott, J.W. Klaus, J.M. Johnson, S.M. George, Al\(_3\)O\(_3\) thin film growth on Si(100) using binary reaction sequence chemistry. Thin Solid Films 292(1–2), 135–144 (1997) A.W. Ott, J.W. Klaus, J.M. Johnson, S.M. George, Al\(_3\)O\(_3\) thin film growth on Si(100) using binary reaction sequence chemistry. Thin Solid Films 292(1–2), 135–144 (1997)
49.
Zurück zum Zitat W.J. Maeng, H.S. Kim, J.S. Park, Review of recent developments in amorphous oxide semiconductor thin-film transistor devices. Thin Solid Films 520(6), 1679–1693 (2012) W.J. Maeng, H.S. Kim, J.S. Park, Review of recent developments in amorphous oxide semiconductor thin-film transistor devices. Thin Solid Films 520(6), 1679–1693 (2012)
50.
Zurück zum Zitat A. Rahtu, T. Alaranta, M. Ritala, In situ quartz crystal microbalance and quadrupole mass spectrometry studies of atomic layer deposition of aluminum oxide from trimethylaluminum and water. Langmuir 17(21), 6506–6509 (2001)CrossRef A. Rahtu, T. Alaranta, M. Ritala, In situ quartz crystal microbalance and quadrupole mass spectrometry studies of atomic layer deposition of aluminum oxide from trimethylaluminum and water. Langmuir 17(21), 6506–6509 (2001)CrossRef
51.
Zurück zum Zitat M. Ritala, H. Saloniemi, M. Leskelä, T. Prohaska, G. Friedbacher, M. Grasserbauer, Studies on the morphology of Al\(_2\)O\(_3\) thin films grown by atomic layer epitaxy. Thin Solid Films 286(1–2), 54–58 (1996) M. Ritala, H. Saloniemi, M. Leskelä, T. Prohaska, G. Friedbacher, M. Grasserbauer, Studies on the morphology of Al\(_2\)O\(_3\) thin films grown by atomic layer epitaxy. Thin Solid Films 286(1–2), 54–58 (1996)
52.
Zurück zum Zitat Y.R. Ryu, J.A. Lubguban, T.S. Lee, H.W. White, T.S. Jeong, C.J. Youn, B.J. Kim, Excitonic ultraviolet lasing in ZnO-based light emitting devices. Appl. Phys. Lett. 90(13), 131115 (2007)CrossRef Y.R. Ryu, J.A. Lubguban, T.S. Lee, H.W. White, T.S. Jeong, C.J. Youn, B.J. Kim, Excitonic ultraviolet lasing in ZnO-based light emitting devices. Appl. Phys. Lett. 90(13), 131115 (2007)CrossRef
53.
Zurück zum Zitat H. Saarenpää, T. Niemi, A. Tukiainen, H. Lemmetyinen, N. Tkachenko, Aluminum doped zinc oxide films grown by atomic layer deposition for organic photovoltaic devices. Solar Energy Mater. Solar Cells 94(8) (2010) H. Saarenpää, T. Niemi, A. Tukiainen, H. Lemmetyinen, N. Tkachenko, Aluminum doped zinc oxide films grown by atomic layer deposition for organic photovoltaic devices. Solar Energy Mater. Solar Cells 94(8) (2010)
54.
Zurück zum Zitat K. Saito, Y. Hiratsuka, A. Omata, H. Makino, S. Kishimoto, T. Yamamoto, N. Horiuchi, H. Hirayama, Atomic layer deposition and characterization of Ga-doped ZnO thin films. Superlattices Microstruct. 42(1–6), 172–175 (2007)CrossRef K. Saito, Y. Hiratsuka, A. Omata, H. Makino, S. Kishimoto, T. Yamamoto, N. Horiuchi, H. Hirayama, Atomic layer deposition and characterization of Ga-doped ZnO thin films. Superlattices Microstruct. 42(1–6), 172–175 (2007)CrossRef
55.
Zurück zum Zitat Samsung, Samsung Expanding Transparent Display Market with a New 46-inch LCD Panel Samsung, Samsung Expanding Transparent Display Market with a New 46-inch LCD Panel
56.
Zurück zum Zitat H. Sato, T. Minami, T. Miyata, S. Takata, M. Ishii, Transparent conducting ZnO thin films prepared on low temperature substrates by chemical vapour deposition using Zn(C\(_5\)H\(_7\)O\(_2\))2. Thin Solid Films 246(1–2), 65–70 (1994) H. Sato, T. Minami, T. Miyata, S. Takata, M. Ishii, Transparent conducting ZnO thin films prepared on low temperature substrates by chemical vapour deposition using Zn(C\(_5\)H\(_7\)O\(_2\))2. Thin Solid Films 246(1–2), 65–70 (1994)
57.
Zurück zum Zitat A. Sazonov, M Meitine, D Stryakhilev, A. Nathan, Low-temperature materials and thin-film transistors for electronics on flexible substrates. Semiconductors 40(8), 959–967 (2006) A. Sazonov, M Meitine, D Stryakhilev, A. Nathan, Low-temperature materials and thin-film transistors for electronics on flexible substrates. Semiconductors 40(8), 959–967 (2006)
58.
Zurück zum Zitat M. Scharrer, X. Wu, A. Yamilov, H. Cao, R.P.H. Chang, Fabrication of inverted opal ZnO photonic crystals by atomic layer deposition. Appl. Phys. Lett. 86(15), 1–3 (2005)CrossRef M. Scharrer, X. Wu, A. Yamilov, H. Cao, R.P.H. Chang, Fabrication of inverted opal ZnO photonic crystals by atomic layer deposition. Appl. Phys. Lett. 86(15), 1–3 (2005)CrossRef
59.
Zurück zum Zitat W. Tang, D.C. Cameron, Aluminum-doped zinc oxide transparent conductors deposited by the sol-gel process. Thin Solid Films 238(1), 83–87 (1994)CrossRef W. Tang, D.C. Cameron, Aluminum-doped zinc oxide transparent conductors deposited by the sol-gel process. Thin Solid Films 238(1), 83–87 (1994)CrossRef
60.
Zurück zum Zitat Current Applied Physics Effect of dopants on the structural, optical and electrical properties of sol-gel derived ZnO semiconductor thin films. 13(1), 60–65 (2013) Current Applied Physics Effect of dopants on the structural, optical and electrical properties of sol-gel derived ZnO semiconductor thin films. 13(1), 60–65 (2013)
61.
Zurück zum Zitat I. Volintiru, M. Creatore, B.J. Kniknie, C.I.M.A. Spee, M.C.M. Van De Sanden, Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition. J. Appl. Phys. 102(4), 043709 (2007)CrossRef I. Volintiru, M. Creatore, B.J. Kniknie, C.I.M.A. Spee, M.C.M. Van De Sanden, Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition. J. Appl. Phys. 102(4), 043709 (2007)CrossRef
62.
Zurück zum Zitat C.C. Wang, B.Y. Man, M. Liu, C.S. Chen, S.Z. Jiang, S.Y. Yang, S.C. Xu, X.G. Gao, B. Hu, The intrinsic room-temperature ferromagnetism in ZnO: Co thin films deposited by PLD. Adv. Condens. Matter Phys. 2012, 1–5 (2012) C.C. Wang, B.Y. Man, M. Liu, C.S. Chen, S.Z. Jiang, S.Y. Yang, S.C. Xu, X.G. Gao, B. Hu, The intrinsic room-temperature ferromagnetism in ZnO: Co thin films deposited by PLD. Adv. Condens. Matter Phys. 2012, 1–5 (2012)
63.
Zurück zum Zitat D.X. Xia, J.B. Xu, High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al\(_2\)O\(_3\) as gate dielectric. J. Phys. D: Appl. Phys. 43(44), 442001 (2010) D.X. Xia, J.B. Xu, High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al\(_2\)O\(_3\) as gate dielectric. J. Phys. D: Appl. Phys. 43(44), 442001 (2010)
64.
Zurück zum Zitat A. Yamada, B. Sang, M. Konagai, Atomic layer deposition of ZnO transparent conducting oxides. Appl. Surf. Sci. 112, 216–222 (1997)CrossRef A. Yamada, B. Sang, M. Konagai, Atomic layer deposition of ZnO transparent conducting oxides. Appl. Surf. Sci. 112, 216–222 (1997)CrossRef
65.
Zurück zum Zitat S. Yoshioka, F. Oba, R. Huang, I. Tanaka, T. Mizoguchi, T. Yamamoto, Atomic structures of supersaturated ZnO- Al\(_2\) O\(_3\) solid solutions. J. Appl. Phys. 103(1), 014309 (2008) S. Yoshioka, F. Oba, R. Huang, I. Tanaka, T. Mizoguchi, T. Yamamoto, Atomic structures of supersaturated ZnO- Al\(_2\) O\(_3\) solid solutions. J. Appl. Phys. 103(1), 014309 (2008)
66.
Zurück zum Zitat E.B. Yousfi, J. Fouache, D. Lincot, Study of atomic layer epitaxy of zinc oxide by in-situ quartz crystal microgravimetry. Appl. Surf. Sci. 153(4), 223–234 (2000) E.B. Yousfi, J. Fouache, D. Lincot, Study of atomic layer epitaxy of zinc oxide by in-situ quartz crystal microgravimetry. Appl. Surf. Sci. 153(4), 223–234 (2000)
Metadaten
Titel
ALD Al-doped ZnO Thin Film as Semiconductor and Piezoelectric Material: Process Synthesis
verfasst von
Ayman Rezk
Irfan Saadat
Copyright-Jahr
2019
DOI
https://doi.org/10.1007/978-3-319-93100-5_3

Neuer Inhalt