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Erschienen in:
Reduced Graphene Oxide for the Design of Electrocardiogram Sensors: Current Status and Perspectives Kapitel lesen Erstes Kapitel lesen

2019 | OriginalPaper | Buchkapitel

4. ALD Al-doped ZnO Thin Film as Semiconductor and Piezoelectric Material: Characterization

verfasst von : Ayman Rezk, Irfan Saadat

Erschienen in: The IoT Physical Layer

Verlag: Springer International Publishing

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Abstract

This chapter covers the physical characterization of various aluminum-doped ZnO films that were synthesized. At high level, it includes electrical characterization followed by mechanical characterization. The electrical characterization includes Hall measurements to assess the mobility of the films, resistance measurements using special microfabricated patterned structures and carrier concentration measurements. The impact of Al doping on the ZnO thin films shows a very strong electrical signal, which manifested itself in the measured values of these parameters that are mentioned above. The results indicate the ability to tune various electrical parameters of the ZnO films through Al doping and growth temperature. Through response surface modeling, a sweet spot is identified where resistivity, mobility, and carrier concentration can be optimized to target values. While the mechanical characterization includes the piezoeffect characterization along with stress and strain analysis. This includes the comparison of different dielectrics films vis–vis ZnO films, followed by an assessment of 1D versus 2D piezoelectric structures including the wurtzite ZnO thin film. This includes the explanation of why these films have the highest piezoelectric coefficient in their class of materials and the role played by c-axis alignment in interpreting these observations. This establishes the criticality of assessing these quantities to come up with the right understanding and explanation for any observations seen in new class of thin films where the method of synthesis or doping is changed. Finally, the assessment of stress and strain in these film systems is presented with the role played by the substrate and the direction of the bending of the thin film. The experimental results include the design and fabrication of a “curved” stage that is used to induce the strains, and compute the associated stress generated, in quantifiable fashion to model the thin-film behavior.

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Vorheriges Kapitel ALD Al-doped ZnO Thin Film as Semiconductor and Piezoelectric Material: Process Synthesis
Nächstes Kapitel ALD Al-doped ZnO Thin Film as Semiconductor and Piezoelectric Material: Transistors and Sensors
Literatur
1.
J.S. Na, G. Scarel, G.N. Parsons, In situ analysis of dopant incorporation, activation, and film growth during thin film ZnO ZnO: Al Atomic layer deposition. J. Phys. Chem. C 114(1), 383–388 (2010)
2.
Renier klenk, Martina Ch Lux-Steiner, Chalcopyrite based solar cells, in Thin Film Solar Cells Fabrication, Characterization and Applications (Wiley, UK, 2006), pp. 237–275
3.
Su Cheol Gong, Ji Geun Jang, Ho Jung Chang, Jin-Seong Park, The characteristics of organic light emitting diodes with Al doped zinc oxide grown by atomic layer deposition as a transparent conductive anode. Synthetic Metals 161(9–10), 823–827 (2011)
4.
A.K. Pradhan, R.M. Mundle, K. Santiago, J.R. Skuza, B. Xiao, K.D. Song, M. Bahoura, R. Cheaito, P.E. Hopkins, Extreme tunability in aluminum doped zinc oxide plasmonic materials for near-infrared applications. Sci. Rep. 4(1), 6415 (2014)
5.
T. Minami, H. Nanto, S. Takata, Optical properties of aluminum doped zinc oxide thin films prepared by rf magnetron sputtering. Jpn. J. Appl. Phys. 24(8), L605–L607 (1985)
6.
S.D. Kirby, R.B. van Dover, Improved conductivity of ZnO through codoping with In and Al. Thin Solid Films 517(6), 1958–1960 (2009)
7.
C. Agashe, O. Kluth, J. Hüpkes, U. Zastrow, B. Rech, M. Wuttig, Efforts to improve carrier mobility in radio frequency sputtered aluminum doped zinc oxide films. J. Appl. Phys. 95(4), 1911–1917 (2004)
8.
Kun Ho Kim, Ki Cheol Park, Dae Young Ma, Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering. J. Appl. Phys. 81(12), 7764 (1997)
9.
G. Luka, P. Stakhira, V. Cherpak, D. Volynyuk, Z. Hotra, M. Godlewski, E. Guziewicz, B. Witkowski, W. Paszkowicz, A. Kostruba, The properties of tris (8-hydroxyquinoline) aluminum organic light emitting diode with undoped zinc oxide anode layer. J. Appl. Phys. 108(6), 064518 (2010)
10.
Z.C. Jin, I. Hamberg, C.G. Granqvist, Optical properties of sputter-deposited ZnO: Al thin films. J. Appl. Phys. 64(10), 5117–5131 (1988)CrossRef
11.
Sang-Hee Ko Park, Jeong-Ik Lee, Chi-Sun Hwang, Hye Yong Chu, Characteristics of organic light emitting diodes with Al-doped ZnO anode deposited by atomic layer deposition. Jpn. J. Appl. Phys. 44(7), L242–L245 (2005)
12.
H. Agura, A. Suzuki, T. Matsushita, T. Aoki, M. Okuda, Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition. Thin Solid Films 445(2), 263–267 (2003)
13.
H. Tanaka, K. Ihara, T. Miyata, H. Sato, T. Minami, Low resistivity polycrystalline ZnO : Al thin films prepared by pulsed laser deposition. J. Vac. Sci. Technol. A 22(4), 1757–1762 (2004)
14.
J.W. Elam, Z.A. Sechrist, S.M. George, ZnO/Al2\(_{\text{O}3}\) nanolaminates fabricated by atomic layer deposition: Growth and surface roughness measurements. Thin Solid Films 414(1), 43–55 (2002)
15.
Horacio D Espinosa, Rodrigo A Bernal, Majid Minary-Jolandan, A review of mechanical and electromechanical properties of piezoelectric nanowires. Adv. Mater. 24(34), 4656–4675 (2012)
16.
Z.L. Wang, X.Y. Kong, Y. Ding, P. Gao, W.L. Hughes, R. Yang, Y. Zhang, Semiconducting and piezoelectric oxide nanostructures induced by polar surfaces. Adv. Funct. Mater. 14(10), 943–956 (2004)
17.
Z.L. Wang, J. Song, Piezoelectric nanogenerators based on zinc oxide nanowire arrays. Science 312, 242–246 (2006)
18.
Q. Yang, W. Wang, S. Xu, Z.L. Wang, Enhancing light emission of ZnO microwire-based diodes by piezo-phototronic effect. Nano Lett. 11(9), 4012–4017 (2011)
19.
H. Youfan, Y. Zhang, L. Lin, Y. Ding, G. Zhu, Z.L. Wang, Piezo-phototronic effect on electroluminescence properties of p-type GaN thin films. Nano Lett. 12(7), 3851–3856 (2012)
20.
Z.L. Wang, W. Wu, Nanotechnology-enabled energy harvesting for self-powered micro-/nanosystems. Angewandte Chemie - Int. Edition 51(47), 11700–11721 (2012)
21.
N. Izyumskaya, Y.-I. Alivov, S.-J. Cho, H. Morkoc, H. Lee, Y.-S. Kang, Processing, structure, properties, and applications of PZT thin films. Critical Rev. Solid State Mater. Sci. 32(September), 111–202 (2007)
22.
Hong Chen, Chen Jia, Wenhan Hao, Chun Zhang, Zhihua Wang, Chunsheng Liu, Power harvesting with PZT ceramics and circuits design. Analog Integr. Circuits Signal Process. 62(2), 263–268 (2010)
23.
Kiyotaka Wasa, Isaku Kanno, Hidetoshi Kotera, Fundamentals of thin film piezoelectric materials and processing design for a better energy harvesting MEMS. Power MEMS 61, 61–66 (2009)
24.
C.T. Pan, Z.H. Liu, Y.C. Chen, C.F. Liu, Design and fabrication of flexible piezo-microgenerator by depositing ZnO thin films on PET substrates. Sens. Actuators, A: Phys. 159(1), 96–104 (2010)
25.
A. Kuoni, R.L. Holzherr, M. Boillat, N.F. De Rooij, Polyimide membrane with ZnO piezoelectric thin film pressure transducers as a differential pressure liquid flow sensor. J. Micromech. Microeng. 13(4), S103–S107 (2003)
26.
J. Molarius, J. Kaitila, T. Pensala, M. Ylilammi, Piezoelectric ZnO films by r.f. sputtering. J. Mater. Sci. Mater. Electron. 14(5–7), 431–435 (2003)
27.
Takayuki Shibata, Kazuya Unno, Eiji Makino, Yoshiho Ito, Shiro Shimada, Characterization of sputtered ZnO thin film as sensor and actuator for diamond AFM probe. Sens. Actuators, A: Phys. 102(1–2), 106–113 (2002)CrossRef
28.
H.I. Kuo, J. Guo, W.H. Ko, High performance piezoresistive micro strain sensors, in Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems (IEEE NEMS, 2007), pp. 1052–1055
29.
H. Gullapalli, V.S.M. Vemuru, Ashavani Kumar, A. Botello-Mendez, R. Vajtai, M. Terrones, S. Nagarajaiah, P.M. Ajayan, Flexible piezoelectric zno-paper nanocomposite strain sensor. Small 6(15), 1641–1646 (2010)
30.
D. Choi, K.Y. Lee, K.H. Lee, Eok Su Kim, T. Sang Kim, S.Y. Lee, S.-W. Kim, J.-Y. Choi, J.M. Kim, Piezoelectric touch-sensitive flexible hybrid energy harvesting nanoarchitectures. Nanotechnology 21(40), 405503 (2010)
31.
Eun Sok Kim, R.S. Muller, IC-processed piezoelectric microphone. IEEE Electron Device Lett. 8(10), 467–468 (1987)
32.
C.J. Van Mullem, F.R. Blom, J.H.J. Fluitman, M. Elwenspoek, Piezoelectrically driven silicon beam force sensor. Sens. Actuators: A. Phys. 26(1–3), 379–383 (1991)
33.
V.F. Rivera, F. Auras, P. Motto, S. Stassi, G. Canavese, E. Celasco, T. Bein, B. Onida, V. Cauda, Length-dependent charge generation from vertical arrays of high-aspect-ratio ZnO nanowires. Chem. - A Eur. J. 19(43), 14665–14674 (2013)
34.
W. Zhang, Ren Zhu, Vu Nguyen, R. Yang, Highly sensitive and flexible strain sensors based on vertical zinc oxide nanowire arrays. Sens. Actuators, A: Phys. 205, 164–169 (2014)
35.
J.M. Wu, C.Y. Chen, Y. Zhang, K.H. Chen, Y. Yang, Y. Hu, H. He, Z.L. Wang, Ultrahigh sensitive piezotronic strain sensors based on a ZnSnO 3 nanowire/microwire. ACS Nano 6(5), 4369–4374 (2012)
36.
Jae Min Kim, Taewook Nam, S.J. Lim, Y.G. Seol, N.E. Lee, Doyoung Kim, Hyungjun Kim, Atomic layer deposition ZnO: N flexible thin film transistors and the effects of bending on device properties. Appl. Phys. Lett. 98(14), 142113 (2011)
37.
Niko Munzenrieder, Kunigunde H. Cherenack, Gerhard Troster, The effects of mechanical bending and illumination on the performance of flexible IGZO TFTs. IEEE Trans. Electron Devices 58(7), 2041–2048 (2011)
38.
Yugang Sun, John A. Rogers, Inorganic semiconductors for flexible electronics. Adv. Mater. 19(15), 1897–1916 (2007)
39.
Claus F Klingshirn, Andreas Waag, Alex Hoffmann, Jean Geurts, Zinc Oxide: From Fundamental Properties Towards Novel Applications (Springer, Berlin, 2010)
40.
R.W. Soutas-Little, Elasticity (Dover Publications, 1999)
Metadaten
Titel
ALD Al-doped ZnO Thin Film as Semiconductor and Piezoelectric Material: Characterization
verfasst von
Ayman Rezk
Irfan Saadat
Copyright-Jahr
2019
Buch
The IoT Physical Layer

Print ISBN: 978-3-319-93099-2

Electronic ISBN: 978-3-319-93100-5

Copyright-Jahr: 2019

DOI
https://doi.org/10.1007/978-3-319-93100-5_4

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