2001 | OriginalPaper | Buchkapitel
An Efficient Frequency-Domain Analysis Technique of MOSFET Operation
verfasst von : Kyu-Il Lee, Jinsoo Kim, Hyungsoon Shin, Chanho Lee, Young June Park, Hong Shick Min
Erschienen in: Simulation of Semiconductor Processes and Devices 2001
Verlag: Springer Vienna
Enthalten in: Professional Book Archive
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We propose a harmonic balance technique for the frequency-domain analysis of MOSFET operation. Our approach is based on the charge-sheet and the non-quasistatic(NQS) MOSFET models in the channel region with the harmonic balance(HB) technique applied to the channel charges. Lateral field effect is considered in the formulation to analyze the short channel MOSFET devices. It is shown that the proposed method renders a computationally efficient tool to analyze the harmonic distortion occurrence in the MOSFET devices due to the nonlinear response of the channel charges.