Analytical modelling, simulation and comparative study of multi-junction (GaInP2/InGaAs/Ge) solar cell efficiency

We present results obtained using MATLAB/Simulink to simulate, experimental data and manufacturer materials specifications of a solar energy generation system (GaInP2/InGaAs/Ge). The simulations were performed by adjusting essential parameters, such as the solar insolation, temperature, and parasitic resistance considering their impact on the I–V and P–V characteristics. The project estimated the generated light current at a certain latitude (Malaysia, Kuala Lumpur) with temperatures and insolation variations through the time of year. Modelling and analysis help to understand the characteristics and behaviour of the present PV generator under lab conditions as well as in the real climate of that location. The results also showed that the power obtained is enhanced under higher incident light intensity, whereas it drops while increasing the PV cell temperature. Moreover, the results included parasitic resistors, which have different impact on the output power. The power conversion efficiency is ideal with the highest shunt resistance and inversely proportional to the series resistance. The PV cell was tested by a solar simulator and the experimental results were compared to the simulation measurements and manufacturer specifications of the PV cell. In addition, the PV cell was inspected by scanning electron microscopy equipped with energy dispersive X-ray (EDX) for morphological characterization and elemental composition of the thin film solar cell.