Skip to main content
Erschienen in:

14.09.2024

Analyzing the operational versatility of advanced IBC solar cells at different temperatures and also with variation in minority carrier lifetimes

verfasst von: Shiladitya Acharyya, Dibyendu Kumar Ghosh, Dipali Banerjee, Santanu Maity

Erschienen in: Journal of Computational Electronics | Ausgabe 6/2024

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

In this work, doped and dopant-free carrier-selective passivating contacts have been incorporated in Interdigitated Back Contact solar cells. TCAD simulation study was done to check the performance of an IBC-SHJ (Silicon Hetero-Junction) and IBC-POLO (POLy-silicon on Oxide as seen in TOPCon) cell structures for both p and n-type wafers. The IBC-POLO structure was also repeated with HfO2 and ZrO2 over electron transport and hole transport layers, respectively. Simulation study was done by replacing the doped silicon layers with dopant-free Transition Metal Oxides (TMOs). NiO was used as a dopant-free hole-selective contact, whereas Nb2O5 was used a dopant-free electron-selective contact. The fabrication of these materials is non-hazardous and at low temperatures due to which they are preferable over the doped Si layers that require toxic gases like phosphine, diborane, etc. and may also require high temperatures. For example, poly-Si layer applied in IBC-POLO requires an annealing temperature of over 800 °C; similarly, the diffusion of Front Surface Field (FSF) layer in normal IBC cells also requires the same high temperature. Temperature variation was done on these structures to check the dependence of solar PV parameters of each IBC structure on different temperatures. Same variation was checked with minority carrier lifetime of the silicon wafer.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Literatur
1.
Zurück zum Zitat Photovoltaics Report (2023) Fraunhofer Institute for Solar Energy Systems, ISE with support of PSE Projects GmbH Photovoltaics Report (2023) Fraunhofer Institute for Solar Energy Systems, ISE with support of PSE Projects GmbH
4.
7.
Zurück zum Zitat Li, F., Sun, Z., Zhou, Y., Wang, Q., Zhang, Q., Dong, G., Liu, F., Fan, Z., Liu, Z., Cai, Z., Zhou, Y., Yu, D.: Lithography-free and dopant-free back-contact silicon heterojunction solar cells with solution-processed TiO2 as the efficient electron selective layer. Sol. Energy Mater. Sol. Cells 203, 110196 (2019)CrossRef Li, F., Sun, Z., Zhou, Y., Wang, Q., Zhang, Q., Dong, G., Liu, F., Fan, Z., Liu, Z., Cai, Z., Zhou, Y., Yu, D.: Lithography-free and dopant-free back-contact silicon heterojunction solar cells with solution-processed TiO2 as the efficient electron selective layer. Sol. Energy Mater. Sol. Cells 203, 110196 (2019)CrossRef
8.
Zurück zum Zitat Um, H.D., Kim, N., Lee, K., Hwang, I., Seo, J.H., Seo, K.: Dopant-free all-back-contact Si nanohole solar cells using MoOx and LiF films. Nano Lett. 16(2), 981–987 (2016)CrossRef Um, H.D., Kim, N., Lee, K., Hwang, I., Seo, J.H., Seo, K.: Dopant-free all-back-contact Si nanohole solar cells using MoOx and LiF films. Nano Lett. 16(2), 981–987 (2016)CrossRef
9.
Zurück zum Zitat Wu, W., Bao, J., Shen, H.: A new type back contact solar cells based on Si wafer and combined with the multilayer MoOx/Ag/MoOx and Cesium Carbonate films. In: 32nd European Photovoltaic Solar Energy Conference and Exhibition, pp. 656–659. Wu, W., Bao, J., Shen, H.: A new type back contact solar cells based on Si wafer and combined with the multilayer MoOx/Ag/MoOx and Cesium Carbonate films. In: 32nd European Photovoltaic Solar Energy Conference and Exhibition, pp. 656–659.
10.
Zurück zum Zitat Wu, W., Lin, W., Zhong, S., Salomon, B.P., Despeisse, M., Jeangros, Q., Liang, Z., Boccard, M., Shen, H., Ballif, C.: Dopant-free back-contacted silicon solar cells with an efficiency of 22.1%. Phys. Status Solidi RRL 14(4), 1900688 (2020)CrossRef Wu, W., Lin, W., Zhong, S., Salomon, B.P., Despeisse, M., Jeangros, Q., Liang, Z., Boccard, M., Shen, H., Ballif, C.: Dopant-free back-contacted silicon solar cells with an efficiency of 22.1%. Phys. Status Solidi RRL 14(4), 1900688 (2020)CrossRef
12.
Zurück zum Zitat Masmitja, G., Ortega, P., Puigdollers, J., Gerling, L.G., Mart’ın, I., Voz, C., Alcubilla, R.: Interdigitated back-contacted crystalline silicon solar cells with low-temperature dopant-free selective contacts. J. Mater. Chem. A 6, 3977 (2018)CrossRef Masmitja, G., Ortega, P., Puigdollers, J., Gerling, L.G., Mart’ın, I., Voz, C., Alcubilla, R.: Interdigitated back-contacted crystalline silicon solar cells with low-temperature dopant-free selective contacts. J. Mater. Chem. A 6, 3977 (2018)CrossRef
13.
Zurück zum Zitat Lin, W., Wu, W., Bao, J., Liu, Z., Qiu, K., Cai, L., Yao, Z., Deng, Y., Liang, Z., Shen, H.: Novel hole selective CrOx contact for dopant-free back contact silicon solar cells. Mater. Res. Bull. 103, 77–82 (2018)CrossRef Lin, W., Wu, W., Bao, J., Liu, Z., Qiu, K., Cai, L., Yao, Z., Deng, Y., Liang, Z., Shen, H.: Novel hole selective CrOx contact for dopant-free back contact silicon solar cells. Mater. Res. Bull. 103, 77–82 (2018)CrossRef
20.
Zurück zum Zitat Ghosh, D.K., Acharyya, S., Bose, S., Das, G., Mukhopadhyay, S., Sengupta, A.: A detailed theoretical analysis of TOPCon/TOPCore solar cells based on p-type wafers and prognosticating the device performance on thinner wafers and different working temperatures. Silicon 15, 7593–7607 (2023). https://doi.org/10.1007/s12633-023-02606-0CrossRef Ghosh, D.K., Acharyya, S., Bose, S., Das, G., Mukhopadhyay, S., Sengupta, A.: A detailed theoretical analysis of TOPCon/TOPCore solar cells based on p-type wafers and prognosticating the device performance on thinner wafers and different working temperatures. Silicon 15, 7593–7607 (2023). https://​doi.​org/​10.​1007/​s12633-023-02606-0CrossRef
22.
Zurück zum Zitat Ghosh, D.K., Das, G., Bose, S., Mukhopadhyay, S., Sengupta, A.: Unveiling the photovoltaic performance and thermal stability of n-TOPCon, p-TOPCon, and TOPCoRE solar cells based on 110 μm wafers. Energy Technol. 12: 2400238. https://doi.org/10.1002/ente.202400238 Ghosh, D.K., Das, G., Bose, S., Mukhopadhyay, S., Sengupta, A.: Unveiling the photovoltaic performance and thermal stability of n-TOPCon, p-TOPCon, and TOPCoRE solar cells based on 110 μm wafers. Energy Technol. 12: 2400238. https://​doi.​org/​10.​1002/​ente.​202400238
26.
Zurück zum Zitat Li, F., Zhou, Y., Liu, M., Dong, G., Liu, F., Wang, W., Yu, D.: Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells. RRL Solar 4(3), 1900514 (2020)CrossRef Li, F., Zhou, Y., Liu, M., Dong, G., Liu, F., Wang, W., Yu, D.: Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells. RRL Solar 4(3), 1900514 (2020)CrossRef
Metadaten
Titel
Analyzing the operational versatility of advanced IBC solar cells at different temperatures and also with variation in minority carrier lifetimes
verfasst von
Shiladitya Acharyya
Dibyendu Kumar Ghosh
Dipali Banerjee
Santanu Maity
Publikationsdatum
14.09.2024
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 6/2024
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-024-02232-y