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Microsystem Technologies
Erschienen in: Microsystem Technologies 10/2016

07.06.2015 | Technical Paper

Annealing temperature effect on structural, optical, morphological and electrical properties of CdS/Si(100) nanostructures

verfasst von: Y. Al-Douri, M. Ameri, A. Bouhemadou, R. Khenata

Erschienen in: Microsystem Technologies | Ausgabe 10/2016

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Abstract

CdS nanostructures have grown on p-type silicon (Si) (100) substrates using sol–gel method. The crystalline quality, surface morphology, optical and electrical properties of the deposited CdS nanostructures have been characterized and analyzed using atomic force microscopy, scanning electron microscopy, X-ray diffraction, thermogravimetric analysis, differential thermal analysis, UV–vis spectroscopy and electrical characterization, respectively. The effect of annealing temperature in the range 200–600 °C on the structural, morphological, optical and electrical properties has been elaborated. The XRD analysis shows that the crystalline quality can be improved by increasing the temperature to 400 °C, but further increase to 600 °C leads to degradation of crystalline quality. The bulk modulus is calculated and showed good agreement with experimental and theoretical results. The optical properties of absorption, reflection, energy band gap and extinction coefficient are obtained by UV–vis spectroscopy. The calculated refractive index and optical dielectric constant have shown good agreement with other results. The electrical and thermal properties are studied for antireflection coating applications.
Vorheriger Artikel Mechanism design with rotational and positioning calibrations for double-sided structure replication
Nächster Artikel Design of a multi-frequency resonator for UHF multiband communication applications

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Literatur
Alex Chediak J, Luo Z, Seo J, Cheung N, Lee LP, Sands TD (2004) Heterogeneous integration of CdS filters with GaN LEDs for fluorescence detection microsystems. Sens Actuators A 111:1–7CrossRef
Al-Douri Y (2003a) The pressure effect of the bulk modulus seen by the charge density in CdX compounds. Mater Chem Phys 78:625–629CrossRef
Al-Douri Y (2003b) Electronic and optical properties of ZnxCd1-xSe. Mater Chem Phys 82:49–54CrossRef
Al-Douri Y, Abid H, Aourag H (2001) Correlation between the bulk modulus and the charge density in semiconductors. Phys B 305:186–190CrossRef
Al-Douri Y, Abid H, Aourag H (2002) Calculation of bulk moduli of semiconductor compounds. Phys B 322:179–182CrossRef
Al-Douri Y, Abid H, Aourag H (2004) Empirical formula relating the bulk modulus to the lattice constant in tetrahedral semiconductors. Mater Chem Phys 87:14–17CrossRef
Al-Douri Y, Abid H, Aourag H (2005) Correlation between the bulk modulus and the transition pressure in semiconductors. Mater Lett 59:2032–2034CrossRef
Al-Douri Y, Feng YP, Huan ACH (2008) Optical investigations using ultra-soft pseudopotential of Si0.5 Ge0.5. Solid State Commun 148:521–524CrossRef
Al-Douri Y, Baaziz H, Charifi Z, Khenata R, Hashim U, Al-Jassim M (2012) Further optical properties of CdX (X = S, Te) compounds under quantum dot diameter effect: Ab initio method. Renewable Energy 45:232–236CrossRef
Al-Douri Y, Khasawneh Q, Kiwan S, Hashim U, Abd Hamid SB, Reshak AH, Bouhemadou A, Ameri M, Khenata R (2014) Structural and optical insights to enhance solar cell performance of CdS nanostructures. Energ Convers Manag 82:238–243CrossRef
Angelo MS, McCandless BE, Birkmire RW, Rykov SA, Chen JG (2007) Contact wetting angle as a characterization technique for processing CdTe/CdS solar cells. Prog Photovoltaics Res Appl 15:93–111CrossRef
Balzaretti NM, da Jornad JAH (1996) Pressure dependence of the refractive index of diamond, cubic silicon carbide and cubic boron nitride. Solid State Commun 99:943–948CrossRef
Barman J, Sarma KC, Sarma M, Sarma K (2008) structural and optical studies of chemically prepared CdS nanoccrystalline thin films. Indian J Pure Appl Phys 46:339–343
Cohen ML (1985) Calculation of bulk moduli of diamond and zinc-blende solids. Phys Rev B 32:7988–7991CrossRef
Dai CM, Horng L, Hsieh WF, Shih YT, Tsai CT, Chuu DS (1992) High orientation CdS thin films grown by pulsed laser and thermal evaporation. J Vac Sci Technol A 10:484–489CrossRef
Erlacher A, Miller H, Ullrich B (2004) Low-power all-optical switch by superposition of red and green laser irradiation in thin-film cadmium sulfide on glass. J Appl Phys 95:2927–2930CrossRef
Ghosh DK, Samanta LK, Bhar GC (1984) A simple model for evaluation of refractive indices of some binary and ternary mixed crystals. Infrared Phys 24:43–47CrossRef
Guo C, Zhang W, Luan L, Chen T, Cheng H, Huang D (2008) A promising red-emitting phosphor for white light emitting diodes prepared by sol-gel method. Sens Actuators B 133:33–39CrossRef
Gupta VP, Ravindra NM (1980) Comments on the moss formula. Phys Status Solidi b 100:715–719CrossRef
Hernandez-Contrerasa H, Contreras-Puentea G, Aguilar-Hernandeza J, Morales-Acevedo A, Vidal-Larramendi J, Vigil-Galan O (2002) CdS and CdTe large area thin films processed by radio-frequency planarmagnetron sputtering. Thin Solid Films 403–404:148–152CrossRef
Herve P, Vandamme LKJ (1994) General relation between refractive index and energy gap in semiconductors. Infrared Phys Technol 35:609–615CrossRef
Herve PJL, Vandamme LKJ (1995) Empirical temperature dependence of the refractive index of semiconductors. J Appl Phys 77:5476–5477CrossRef
Jinesh KB, Sudha Kartha C, Vijayakumar KP (2003) Role of excess cadmium in the electrical properties of devices made of the chemically deposited nano-CdS. Appl Surf Sci 207:26–32CrossRef
Kim MJ, Lee JJ, Lee SH, Sohn SH (2013) Study of CdTe/CdS heterostructure by CdCl2 heat treatment via in situ high temperature XRD. Sol Energy Mater Sol Cells 109:209–214CrossRef
Lam PK, Cohen ML, Martinez G (1987) Analytic relation between bulk moduli and lattice constants. Phys Rev B 35:9190–9194CrossRef
Mahdi MA, Kasem SJ, Hassen JJ, Swadi AA, l-Ani SKJA (2009) Structural and optical properties of chemical deposition CdS thin films. Int J Nanoelectron Mater 2:163–172
Moss TS (2012) A Relationship between the refractive index and the infra-red threshold of sensitivity for photoconductors. Proc Phys Soc B 63:167–176CrossRef
Nguyen Cong H, Sene C, Chartier P (1993) Photovoltaic cell based on cadmium sulfide sprayed film and electrolytic poly(3-methylthiophene): solvent nature effect. Sol Energ Mater Sol Cells 30:127–138CrossRef
Penn DR (1962) Wave-number-dependent dielectric function of semiconductors. Phys Rev 128:2093–2097CrossRefMATH
Perna G, Capozzi V, Pagliara S, Ambrico M, Lojacono D (2001) Reflectance and photoluminescence characterization of CdS and CdSe heteroepitaxial films deposited by laser ablation technique. Thin Solid Films 387:208–211CrossRef
Phillips JC (1973) Bonds and bands in semiconductors. Academic Press, San Diego
Ravindra NM, Auluck S, Srivastava VK (1979) On the penn gap in semiconductors. Physica Status Solidi B 93:k155–k160CrossRef
Sahraei R, Shahriyar S, Majles Ara MH, Daneshfar A, Shokri N (2010) Preparation of nanocrystalline CdS thin films by a new chemical bath deposition route for application in solar cells as antireflection coatings. Prog Color Colorants Coat 3:82–90
Samara GA (1983) Temperature and pressure dependences of the dielectric constants of semiconductors. Phys Rev B 27:3494–3505CrossRef
Sherry AM, Kumar M (1991) Analysis of thermal expansion for alkali halide crystals using the isobaric equation of state. J Phys Chem Solids 52:1145–1148CrossRef
Tallon JL (1980) The thermodynamics of elastic deformation-I: Equation of state for solids. J Phys Chem Solids 41:837–850CrossRef
Trujillo O, Moss R, Vuong KD, Lee DH, Noble R, Finnigan D, Orloff S, Tenpas E, Park C, Fagan J, Wang XW (1996) CdS thin film deposition by CW Nd: YAG laser. Thin Solid Films 290–291:13–17CrossRef
Ullrich B (2001) R. Schr oeder, Green single- and two-photon gap emission of thin-film CdS formed by infrared pulsed-laser deposition on glass. IEEE J Quantum Electron 37:1363–1367CrossRef
Ullrich B, Bagnall DM, Sakai H, Segawa Y, Lumin J (2000) Photoluminescence and lasing of thin CdS films on glass formed by pulsed-laser-deposition. J Lumin 87–89:1162–1164CrossRef
Ullrich B, Sakai H, Segawa Y (2001) Optoelectronic properties of thin film CdS formed by ultraviolet and infrared pulsed-laser deposition. Thin Solid Films 385:220–224CrossRef
Van Vechten JA (1969) Quantum dielectric theory of electronegativity in covalent systems. I. Electronic dielectric constant. Phys Rev 182:891–905CrossRef
Wang H, Zhu Y, Ong PP (2000) Rotary target method to prepare thin films of CdS/SiO2 by pulsed laser deposition. J Cryst Growth 220:554–559CrossRef
Weast RC (1972) Handbook of chemistry and physics, 53rd edn. CRC, USA
Zhu Y-Q, Shan Y-Y, Qin M (2014) Design and implementation of novel thin film position-sensitive detectors (TFPSDs) based on photoconductive effect. Microsyst Technol 20:1843–1847CrossRef
Metadaten
Titel
Annealing temperature effect on structural, optical, morphological and electrical properties of CdS/Si(100) nanostructures
verfasst von
Y. Al-Douri
M. Ameri
A. Bouhemadou
R. Khenata
Publikationsdatum
07.06.2015
Verlag
Springer Berlin Heidelberg
Erschienen in
Microsystem Technologies / Ausgabe 10/2016
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI
https://doi.org/10.1007/s00542-015-2584-6

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