Abstract
This paper presents the first report on in situ antimony doping for growing p-CdTe films using electrodeposition. The verification of p-doping of CdTe during growth was ascertained by means of steady state cathodic polarization under chopped illumination. Proton induced x-ray emission spectroscopy (PIXE) was used to verify the incorporation of antimony. It is further shown that Sb impurities promote preferential orientation of the low index (111) plane of CdTe films. The morphology of the deposit was studied using atomic force microscopy (AFM).
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