Spin-flip Raman scattering studies of ZnSe bulk crystals doped with antimony

We have used spin-flip Raman scattering and photoluminescence to investigate ZnSe crystals doped with antimony, which is a potential p-type dopant. The experiments provide evidence for the existence of a shallow acceptor level at about 70 meV above the valence band and for the presence of a previously unreported deep donor level at about 55 meV below the conduction band. As in ZnSe doped with nitrogen, it is possible that the formation of such deep-donor states may be an inevitable consequence of high concentrations of p-type dopants and that the resulting compensation may be one of the reasons why attempts to obtain p-type conductivity continue to be difficult.