Transistor Action in Lead Telluride

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, , Citation C A Hogarth 1952 Proc. Phys. Soc. B 65 958 DOI 10.1088/0370-1301/65/12/307

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1 Telecommunications Research Establishment, Ministry of Supply, Malvern, Worcs

Dates

  1. Received 21 August 1952

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0370-1301/65/12/958

Abstract

Transistor action has been observed in single crystals of lead telluride, examined at 90°k Properties of the units are described and it is found that values of current gain greater than unity may be observed

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10.1088/0370-1301/65/12/307