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Weak localization and transport gap in graphene antidot lattices

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Published 30 September 2009 Published under licence by IOP Publishing Ltd
, , Focus on Graphene Citation J Eroms and D Weiss 2009 New J. Phys. 11 095021 DOI 10.1088/1367-2630/11/9/095021

1367-2630/11/9/095021

Abstract

We fabricated and measured antidot lattices in single layer graphene with lattice periods down to 90 nm. In large-period lattices, a well-defined quantum Hall effect is observed. Going to smaller antidot spacings, the quantum Hall effect gradually disappears, following a geometric size effect. Lattices with narrow constrictions between the antidots behave as networks of nanoribbons, showing a high-resistance state and a transport gap of a few mV around the Dirac point. We observe pronounced weak localization in the magnetoresistance, indicating strong intervalley scattering at the antidot edges. The area of phase-coherent paths is bounded by the unit cell size at low temperatures, so each unit cell of the lattice acts as a ballistic cavity.

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10.1088/1367-2630/11/9/095021