Abstract
Various PDMS patterns with a few microns to sub-micron size and thickness of 20∼30 nanometers were successfully transferred on the substrate via simple printing process of a buffered oxide etchant-treated PDMS stamp on the SiO2 substrate. The patterned PDMS layer acted as sacrificial layer for metal-film patterning and as chemical passivation layer for the selective adsorption of V2O5 nanowires. In particular, the electrical measurement of the patterned V2O5 nanowire network showed the semiconducting non-ohmic behavior in the channel.
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