Exciton Absorption Spectrum in ZnSiP2 Crystal

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Copyright (c) 1980 The Japan Society of Applied Physics
, , Citation Tsuguru Shirakawa et al 1980 Jpn. J. Appl. Phys. 19 L618 DOI 10.1143/JJAP.19.L618

1347-4065/19/10/L618

Abstract

The precise measurements of absorption coefficients near the pseudodirect band edge in ZnSiP2 have been performed using the polarized light at 2 K. The absorption peak for the excited state (n=2) of A' exciton has for the first time been observed at 2.143 eV with the light polarized perpendicular to c-axis (Ec). Using the photon energies of An=1' exciton peak (ground state) and An=2' peak, the exciton binding energy and the reduced mass were determined to be 27 meV and 0.224m0, respectively. These values are slightly larger than those obtained theoretically.

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10.1143/JJAP.19.L618