Optoelectrical Properties of Hydrogenated Amorphous Silicon-Polycrystalline Cadmium Telluride Heterojunctions

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Copyright (c) 1985 The Japan Society of Applied Physics
, , Citation Hidenori Mimura et al 1985 Jpn. J. Appl. Phys. 24 L717 DOI 10.1143/JJAP.24.L717

1347-4065/24/9A/L717

Abstract

Optoelectrical properties of heterojunctions consisting of hydrogenated amorphous silicon (a-Si:H) and polycrystalline cadmium telluride (pc-CdTe) have been investigated in current-voltage characteristics and spectral photoresponses. It was found that the a-Si:H/pc-CdTe heterojunctions had depletion layers on both sides of a-Si:H and pc-CdTe and provided a high and flat photosensitivity over the wavelength range from 400 to 850 nm. These results hold promise for application to a highly efficient solar cell and a photo-sensor.

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10.1143/JJAP.24.L717