Dielectric Constant and Leakage Current of Epitaxially Grown and Polycrystalline SrTiO3 Thin Films

and

Copyright (c) 1993 The Japan Society of Applied Physics
, , Citation Kazuhide Abe Kazuhide Abe and Shuichi Komatsu Shuichi Komatsu 1993 Jpn. J. Appl. Phys. 32 4186 DOI 10.1143/JJAP.32.4186

1347-4065/32/9S/4186

Abstract

The dielectric constant and leakage current were studied for SrTiO3 films thinner than 100 nm, focusing on the influence of the dielectric-electrode interface and the grain boundary. Experimentally, the thickness dependence of the dielectric constant and leakage current was investigated for both epitaxially grown films and polycrystalline films. The interface between the dielectric and electrode, as well as the grain boundary, has been found to cause the lowering of the dielectric constant. The grain boundary has been found to exert a notable effect in suppressing the leakage current.

Export citation and abstract BibTeX RIS

10.1143/JJAP.32.4186