Photocapacitance Measurement on Intentionally Undoped n-Type Ga0.9Al0.1As Grown by Stoichiometry Control Method

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Copyright (c) 1994 The Japan Society of Applied Physics
, , Citation Jun-ichi Nishizawa et al 1994 Jpn. J. Appl. Phys. 33 1753 DOI 10.1143/JJAP.33.1753

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1 Tohoku University, Katahira Aoba-ku, Sendai 980

2 Faculty of Engineering, Tohoku University, Aramaki Aoba-ku, Sendai 980

3 Semiconductor Research Institute, Semiconductor Research Foundation,

4 Kawauchi, Aoba-ku, Sendai 980

Dates

  1. Received 17 January 1994
  2. Accepted 19 February 1994

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Abstract

Photocapacitance (PHCAP) measurements have been performed for intentionally undoped n-type Ga0.9Al0.1As grown by liquid-phase epitaxy (LPE) with arsenic vapor pressure controlled in the range from 0.016 to 51 Torr. Eν+0.47 eV and Eν+0.7–0.8 eV deep levels are found to be dominant. The density of the Eν+0.47 eV deep levels increases with increasing arsenic vapor pressure in proportion to P As1/2. The Eν+0.47 eV deep levels are considered to be associated with arsenic interstitial atoms.

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10.1143/JJAP.33.1753