Characteristics of SiOF Films Formed by Remote Plasma Enhanced Chemical Vapor Deposition with SF₆ Gas

The dielectric SiOF films were deposited by a simple technique which was SF₆ gas addition to the TEOS based and SiH₄ based Remote Plasma Enhanced Chemical Vapor Deposition (RPECVD). The deposition rate decreased with increasing of the SF₆ flow rate about 30 sccm. The refractive index decreased with increasing SF₆ flow rate. The etch rate decreased down to 20 sccm, while in the case of above 20 sccm somewhat increased with increasing with SF₆ flow rate. The peak position of the Si–O stretching mode gradually shifts to higher wave number with increasing of the SF₆ flow rate. The dielectric constant decreased to 3.3. Gap filling and planarizability of the dielectric film formed by the TEOS with SF₆ gas is better than that of the films made with conventional TEOS based.