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Bonding Temperature Dependence of Optically Controlled Field-Effect Transistor Fabricated by Direct Wafer Bonding Technique

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Copyright (c) 1996 The Japan Society of Applied Physics
, , Citation Takayuki Sakai Takayuki Sakai and Kazuhiko Shimomura Kazuhiko Shimomura 1996 Jpn. J. Appl. Phys. 35 L835 DOI 10.1143/JJAP.35.L835

1347-4065/35/7A/L835

Abstract

An optically controlled field-effect transistor (FET) in which the GaAs FET region and the GaInAs/InP light absorption region were directly bonded was demonstrated. The temperature dependence of the direct bonding and its effect on the performance of the optically controlled FET were examined. A maximum current modulation rate of 60% and a responsivity of more than 150(A/W) were obtained.

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10.1143/JJAP.35.L835