Weak Antilocalization in Si δ-Doped InxGa1-xAs Systems

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Copyright (c) 1997 The Japan Society of Applied Physics
, , Citation Yukihiko Takagaki et al 1997 Jpn. J. Appl. Phys. 36 2212 DOI 10.1143/JJAP.36.2212

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1 NTT Basic Research Laboratories, Atsugi, Kanagawa 243-01, Japan

2 Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany

Dates

  1. Received 16 December 1996
  2. Accepted 18 February 1997

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Abstract

We have investigated the transport properties of a quasi-two-dimensional electron gas in Si δ-doped InxGa1-xAs/GaAs (001) systems with x=0.2 and 0.3 at T=0.3–3 K. A large electron density of 8.4×1016 m-2 is obtained for the doping density 1017 m-2. We have evaluated the phase breaking time and the spin-orbit scattering time by means of the weak antilocalization effect. The two-dimensional electron-electron interaction in disordered systems is found to be responsible for the dephasing.

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