Abstract
Lateral p-n junctions on GaAs (111)A patterned substrates are characterized through the spatially resolved detection of light emission by current injection using a collection-mode near-field scanning optical microscope. The junctions are one-step grown at the upper and the lower end of the slope, taking advantage of the amphoteric nature of Si in GaAs. Although the width of the transition region determined from spatially resolved photoluminescence measurements is much wider in the lower junction than in the upper one, the broadness of the junction, which is observed for the first time owing to the high resolution of the detection system, is the same for both junctions.
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