Structural Study of Si(111)(2√3×2√3)R30°–Sn Surfaces

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Published 1 August 2003 Copyright (c) 2003 The Japan Society of Applied Physics
, , Citation Toshihiro Ichikawa and Kohei Cho 2003 Jpn. J. Appl. Phys. 42 5239 DOI 10.1143/JJAP.42.5239

1347-4065/42/8R/5239

Abstract

In order to clarify the structure of high-temperature phase of Si(111)(2√3×2√3)R30°–Sn surfaces, in situ scanning tunneling microscopic observations were performed. The study led to important findings that the high-temperature phase is not a (1×1) structure but a disordered one and that the (2√3×2√3)R30° structure changes to the disordered one through a high-temperature (2√3×2√3)R30° structure newly found. A model for the (2√3×2√3)R30° structure at room temperature was proposed through an ab initio structure relaxation calculation, which can explain well the features of diffraction intensity, Paterson function and scanning tunneling images of the (2√3×2√3)R30° structure.

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10.1143/JJAP.42.5239