Fabrication of Oxide-Confined Collector-Up Heterojunction Bipolar Transistors

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Published 1 April 2003 • Copyright (c) 2003 The Japan Society of Applied Physics
, , Citation Wen-Bin Chen et al 2003 Jpn. J. Appl. Phys. 42 L417 DOI 10.1143/JJAP.42.L417

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1 Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, No. 1 University Road, Tainan, Taiwan 70101, R. O. C.

2 Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, R. O. C.

3 Epitech Technology Corporation, No. 10 Da-Shuen 9th Rd., Tainan Science-Based Industrial Park, Tainan, Taiwan 74145, R. O. C.

Dates

  1. Received 14 February 2003
  2. Accepted 24 February 2003
  3. Published

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1347-4065/42/4B/L417

Abstract

The first fabrication and current-voltage characteristics of oxide-confined collector-up heterojunction bipolar transistors (HBTs) were reported. A partially oxidized Al0.98Ga0.02As layer was introduced between the base layer and the emitter layer to reduce the base leakage current. The current gain and the turn-on voltage of the fabricated HBT were 16 and 1.07 V, respectively.

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10.1143/JJAP.42.L417