Abstract
A number of new selective wet etching solutions for 
over 
and 
have been investigated. We find that in addition to
and 
, the following room temperature acids also etch 
lattice matched to 
. Selective etching over 
can be obtained with 
, 
, 
and 
, while use of 
, 
, 
and 
provides selectivity over In
. The etching of 
in 
is thermally activated, and has the form 
, where 
, consistent with the rate‐limiting step being chemical reaction at the 
surface.