Abstract
Chemical deposition of 
from aqueous solutions has been studied using a reaction of 
and 
with excess 
. The growth rate was measured as a function of temperature and concentrations of 
and 
using glass substrates. It is found that the incubation time depends on temperature and 
concentration. Epitaxial growth of 
on Ge(100) and 
substrates is confirmed by means of the Laue back reflection x‐ray and the electron channeling patterns. The best surface morphology is obtained on the epitaxial film grown on 
substrate at 298 K with the concentrations of 
and 
at 0.57 and 0.4 M/liter, respectively.