Abstract
Gallium indium arsenide is a promising semiconductor for a wide range of device applications. The compound 
has the same lattice constant as 
, prompting considerable effort to grow it epitaxially on 
in order to minimize defects at the epi‐substrate interface. This paper outlines the conditions that we believe are necessary for growing epitaxial layers of
on 
substrates. Experiments have been conducted to grow these layers under atmospheric pressure, unlike previous work which was done at reduced pressure. Emphasis has been placed on the use of an in situetching of the 
substrate, with 
, which we find to be critical for layer growth. Etch rates were controllable between 2–20 μm/min and no dopant pile‐up was observed using Auger spectroscopy. 
layers were grown at 700°C with 
and exhibited a linear relation to the In/Ga ratio in the reactant stream.