Abstract
Coprecipitation of 
has been observed in O‐doped 
epitaxial films grown by liquid‐phase epitaxy under isothermal conditions at an average growth temperature of ∼1040°C. The coprecipitation seems to be independent of cooling rate and of the source of O [
powder, bulk 
, or glassy 
]. The coprecipitation of 
could be prevented either by imposing a temperature gradient over the ampoule (to enhance vapor transport via 
) or by reducing the amount of O added to the Ga‐rich solution in an isothermal system to 
. The latter result is interpreted as giving the solubility at ∼1040°C of 
in Ga saturated with 
and is used to obtain an estimate of the eutectic valley in the ternary 
system.