Abstract
We studied the size distribution and scaling behavior of self-assembled InAlAs/AlGaAs quantum dots (QDs) grown on GaAs in the Stranski–Krastanow (SK) mode by molecular beam epitaxy (MBE) at 480 and 510 °C as a function of InAlAs coverage. A scaling function of the volume was found for the first time in ternary alloy QDs. The function was similar to that of InAs/GaAs QDs, which agreed with the scaling function for a two-dimensional submonolayer homoepitaxy simulation with a critical island size of i = 1. However, a characteristic of i = 0 was also found as a tail in a large volume.