Abstract
Mist chemical vapor deposition (CVD) has been applied to fabricate MgO thin films under atmospheric pressure. In this work, to fabricate highly crystalline MgO thin films at low temperature, the effects of ozone gas (O3), aqueous ammonia (NH3), and a combination of O3 and NH3 on the crystallization temperature were studied by comparing samples grown under a standard condition of inactive gas such as argon (Ar). It was clarified that the crystallization temperature was decreased from 450 to 400 °C by the assistance of O3 and the crystallinity was improved by the addition of NH3. The growth of higher crystallinity MgO thin films at temperatures above 400 °C was possible by the combination of O3 and NH3, which caused stronger enhancement of the crystallization temperature and crystallinity. The causes of these effects were analyzed thermodynamically, and it was clarified that the results were due to the activated oxygen sources and the stability level of precursor materials in the solution.