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Erschienen in:
Introduction to 3D Microelectronic Packaging Kapitel lesen Erstes Kapitel lesen

2021 | OriginalPaper | Buchkapitel

6. Atomic Scale Kinetics of TSV Protrusion

verfasst von : Jinxin Liu, Zhiheng Huang, Paul Conway, Yang Liu

Erschienen in: 3D Microelectronic Packaging

Verlag: Springer Singapore

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Abstract

Thermal stress-induced protrusion of Cu-TSVs during thermal processing poses substantial reliability concerns in 3D stacked ICs. Following Chap. 5, a two-mode PFC model is used to simulate the microstructural evolution and Cu protrusion of blind TSVs at nanoscale in this chapter. The protrusion behavior under different mechanical loadings is discussed first and then effects of different grain structures on TSV protrusion are presented. The combined effects from both the mechanical loading condition and the Cu grain structures are found to control the complex process of protrusion. Simulation results also suggest that the grains in top end of the TSV contribute more to both the protrusion profile and the protrusion height than the grains below. In addition, the influence of parameters such as temperature and TSV geometry on protrusion are also discussed. General perspectives of TSV protrusion, including atomic mechanisms, criteria to predict the protrusion profile, and a viewpoint from plastic flow are highlighted. The chapter ends up with a discussion on future work to deepen our understanding on TSV protrusion.

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Vorheriges Kapitel Phase-Field-Crystal Model: A Tool for Probing Atoms in TSV
Nächstes Kapitel Fundamentals and Failures in Die Preparation for 3D Packaging
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Metadaten
Titel
Atomic Scale Kinetics of TSV Protrusion
verfasst von
Jinxin Liu
Zhiheng Huang
Paul Conway
Yang Liu
Copyright-Jahr
2021
Verlag
Springer Singapore
Buch
3D Microelectronic Packaging

Print ISBN: 978-981-15-7089-6

Electronic ISBN: 978-981-15-7090-2

Copyright-Jahr: 2021

DOI
https://doi.org/10.1007/978-981-15-7090-2_6

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