Back-Gated MoTe₂ Based 1T-AND Gate Using Non-equilibrium Green’s Function: Design and Investigation

Because of an increase in short channel effects, metal oxide semiconductor field-effect transistors are failing to cope with Moore’s law. Solutions provided by researchers such as tunnel field-effect transistors or junctionless transistors are hard to fabricate; hence, metal oxide semiconductor field-effect transistors remain as the backbone of the industry. In this work, a single transistor-based AND logic gate is studied. To design the AND gate, a split-gate structure metal oxide semiconductor field-effect transistor is used. With smaller dimensions, silicon is susceptible to confinement effects. Thus, a 2-dimensional transition metal dichalcogenides (MoTe₂) is preferred for designing the device structure. The back-gate technique is used for better-controlled channel operation. The effect of variation in the work function and length of back-gate and density of interface trap charge on device performance is investigated. The applied bias on both the gates acts as the input to the AND gate. States investigated are ‘01’, ‘10’ and ‘11’. The fundamental model of simulation is non-equilibrium Green’s function to capture the effects of quantum confinement, band gap narrowing, ballistic transport and so on. The effect of parametric variation on the density of states is also observed. The analysis of higher-order transconductances provides an insight into the device linearity and distortion present in the output signal. The proposed device can be used to achieve low power dissipation and smaller area.