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Erschienen in: Journal of Materials Science: Materials in Electronics 3/2017

14.10.2016

Band gap engineering in lead sulphur selenide (PbS1−x Se x ) thin films synthesized by chemical bath deposition method

verfasst von: Fekadu Gashaw Hone, Francis Kofi Ampong, Robert Kwame Nkum, Francis Boakye

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 3/2017

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Abstract

Nanocrystalline PbS1−x Se x (0 ≤ x ≤ 1) thin films have been deposited on silica glass substrate by the chemical bath deposition technique. The deposited PbS1−x Se x thin films were smooth and mirror-like gray in color. The films were characterized by a variety of techniques and the effect of selenium (Se) concentration analyzed. The X-ray diffraction analyses revealed that all the PbS1−x Se x thin films were polycrystalline and had the face centered cubic structure. Variation in Se concentration had a significant effect on the preferred orientation of the crystallites. The lattice constant and inter planer distance increased linearly with the gradual addition of Se in the PbS1−x Se x thin films. Energy dispersive X-ray analysis confirmed that all the samples have stoichiometric composition. The surface morphology of the films has been examined using scanning electron microscopy. The optical absorption spectroscopy study revealed that the optical band gap of the PbS1−x Se x thin films tuned from near-infrared to visible region (1.32–1.08 eV) by simple and cost effective route.

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Metadaten
Titel
Band gap engineering in lead sulphur selenide (PbS1−x Se x ) thin films synthesized by chemical bath deposition method
verfasst von
Fekadu Gashaw Hone
Francis Kofi Ampong
Robert Kwame Nkum
Francis Boakye
Publikationsdatum
14.10.2016
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 3/2017
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-5874-6

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