Barium Titanate Nickelate Nanostructured Materials Prepared by Solution Process for Resistive Random Access Memory Application

Barium titanate nickelate (BTN) nanorod (NR)-based resistive random access memory (RRAM) has been demonstrated by using the hydrothermal method. The prepared BTN NR materials have the advantages of ease of fabrication, low temperature application, ability to grow various materials, and relative cost effectiveness. In addition, the BTN NR-based RRAM displayed a highly repeatable and forming-free bipolar resistive switching behavior with an ON/OFF ratio of over 10⁵. The resistive switching behavior may be related to the oxygen vacancies on the surface of the BTN NRs, giving rise to the formation of straight and extensible conducting filaments along each vertically aligned BTN NR. Compared to its counterpart of BTN thin film, superior reproducibility was also observed, demonstrating that the nanostructured material provides an effective way to improve the memory properties.