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Erschienen in:
2021 | OriginalPaper | Buchkapitel
4. BJT and FET Models
verfasst von : Stephan J. G. Gift, Brent Maundy
Erschienen in: Electronic Circuit Design and Application
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Abstract
In Chaps. 2 and 3, the BJT and FET were introduced and their operation discussed. The need for biasing was established and various biasing schemes presented. Also, the operation of the BJT and FET as amplifiers each in three configurations was discussed. While the methods utilized gave reasonably good answers, more precise design requires the use of BJT and FET models or equivalent circuits. The models we adopt are the hybrid parameter or h-parameter model and the y-parameter model. These transistor parameters can in general be obtained from manufacturer’s data sheets. At the end of this chapter, the student will be able to: