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Journal of Computational Electronics

Erschienen in:

02.08.2019

Boosting the performance of an ultrascaled carbon nanotube junctionless tunnel field-effect transistor using an ungated region: NEGF simulation

verfasst von: Khalil Tamersit

Erschienen in: Journal of Computational Electronics | Ausgabe 4/2019

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Abstract

This paper focuses on the role of the longitudinal spacing between the auxiliary gate and control gate in boosting the performance of an ultrascaled junctionless carbon nanotube tunnel field-effect transistor (JL CNT-TFET). The investigation is based on self-consistent quantum simulations in the nonequilibrium Green’s function formalism in the ballistic limit. It is found that dilation of the ungated longitudinal space between the gates causes a significant improvement in the leakage current, ambipolar behavior, subthreshold swing, on/off-current ratio, power–delay product, and intrinsic delay. In addition, a substantial enhancement in the swing factor and current ratio is also recorded for the JL CNT-TFET with coaxial control gate length below 10 nm. The results indicate that adjusting the spacing between the auxiliary gate and control gate is a simple, efficient, and promising approach to achieve ultrascaled JL CNT-TFETs with very high performance.

Vorheriger Artikel A computational study of short-channel effects in double-gate junctionless graphene nanoribbon field-effect transistors

Nächster Artikel A compact model for III–V nanowire electrostatics including band non-parabolicity

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Titel: Boosting the performance of an ultrascaled carbon nanotube junctionless tunnel field-effect transistor using an ungated region: NEGF simulation
verfasst von: Khalil Tamersit
Publikationsdatum: 02.08.2019
Verlag: Springer US
Erschienen in: Journal of Computational Electronics / Ausgabe 4/2019
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-019-01385-5

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