2014 | OriginalPaper | Buchkapitel
Catalytic Growth of 3C-SiC Nanorods: Structural and Optical Characterization
verfasst von : Afzal Khan, Chacko Jacob
Erschienen in: Physics of Semiconductor Devices
Verlag: Springer International Publishing
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Cubic (3C)-silicon carbide (SiC) nanorods were grown in an inductively heated horizontal cold wall quartz tube reactor by atmospheric pressure chemical vapor deposition (APCVD). A single source precursor, hexamethyldisilane (HMDS) was used for both silicon and carbon and hydrogen (H
2
) as a carrier gas. A 10 nm thin film of nickel was used as a catalyst. As-grown nanorods were characterized by x-ray diffraction (XRD), Raman spectroscopy and field emission scanning electron microscopy (FESEM) to confirm the crystalline nature and the surface morphology of these nanorods. The room temperature photoluminescence (RTPL) spectrum showed the violet-blue emission from these nanorods.