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Erschienen in: Journal of Materials Science 15/2014

01.08.2014

Ce-doped bismuth ferrite thin films with improved electrical and functional properties

verfasst von: Surbhi Gupta, Monika Tomar, A. R. James, Vinay Gupta

Erschienen in: Journal of Materials Science | Ausgabe 15/2014

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Abstract

Bi1−xCexFeO3 (BCFO) thin film capacitors (x = 0 to 0.2) are fabricated on indium tin oxide coated corning glass substrate by chemical solution deposition method. X-ray diffraction results show a partial phase transition from rhombohedral to tetragonal structure induced in BCFO thin film having preferred (110) orientation with increase in Ce dopant concentration. Current density–field (JE) characteristics indicate that the leakage current density reduces by several orders of magnitude in Ce-doped BFO thin films resulting from smaller grain sizes and smoother surfaces. Space-charge-limited current and Fowler–Nordheim tunneling are identified as dominating leakage behavior in BCFO thin film capacitors at moderate and high field regions, respectively. Enhanced ferroelectric response with well-saturated (PE) hysteresis loop is observed for Bi0.88Ce0.12FeO3 thin film having high remnant polarization (P r—127 µC/cm2) at an applied field of 1080 kV/cm. Bi0.88Ce0.12FeO3 thin film exhibiting well-defined capacitance–field (CE) butterfly loop with dielectric loss (tan δ—0.03) measured at 10 kHz suggested good ferroelectric properties with high tunability of about 88 %.

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Metadaten
Titel
Ce-doped bismuth ferrite thin films with improved electrical and functional properties
verfasst von
Surbhi Gupta
Monika Tomar
A. R. James
Vinay Gupta
Publikationsdatum
01.08.2014
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 15/2014
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-014-8243-y

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