Anzeige
Erschienen in:
2011 | OriginalPaper | Buchkapitel
Channel Material Engineered Nanoscale Cylindrical Surrounding Gate MOSFET with Interface Fixed Charges
verfasst von : Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta
Erschienen in: Trends in Network and Communications
Verlag: Springer Berlin Heidelberg
Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
The paper presents a simulation study of effect of interface fixed charges on the performance of the nanoscale cylindrical surrounding gate (SRG)MOSFET for different channel materials (Si, GaAs and Ge). The objective of the present work is to study the effect of hot carrier induced fixed charges at the semiconductor-oxide interface of the nanoscale cylindrical surrounding gate (SRG) MOSFET. Also the circuit reliability issues of the device are discussed in terms of the performance degradation due to interface fixed interface charges and the performance has been compared for the three materials.