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The Physics of Hydrogenated Amorphous Silicon I

Part of the book series: Topics in Applied Physics ((TAP,volume 55))

Abstract

It is clear that bombardment effects now dominate the discussion of growth in sputtered a-Si : H. With a more quantifiable measurement of the bombarding species, controlled deposition conditions can be used to fabricate better quality material. It must be recognized that the electron and H ion species are controlled by the alternating rf voltages at the target, plasma and substrate. Provided with this improved understanding and control of growth conditions, the precise physical properties of sputtered a-Si : H can be evaluated. Resolving issues of heterogeneity and the relationship between certain defects, hydrogen incorporation sites and recombination processes still provide a considerable challenge.

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  1. Malcolm J. Thompson
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John D. Joannopoulos PhD Gerald Lucovsky PhD

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Thompson, M.J. (1984). Sputtered material. In: Joannopoulos, J.D., Lucovsky, G. (eds) The Physics of Hydrogenated Amorphous Silicon I. Topics in Applied Physics, vol 55. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-12807-7_18

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  • DOI: https://doi.org/10.1007/3-540-12807-7_18

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