Abstract
Materials which are currently used in spin electronic devices, and materials which may be useful in future are discussed. These include iron- cobalt- and nickel-based alloys for spin polarization and analysis, metallic and insulating antiferromagnets for exchange bias and oxides for tunnel barriers. The 3d alloys also serve as detection or sensor layers. Permanent magnet materials play a role in biasing some device structures. Novel materials are half-metallic oxides for all-oxide devices, and magnetic semiconductors which may allow the integration of spin electronics and optoelectronics.
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Coey, J.M.D. (2001). Materials for Spin Electronics. In: Ziese, M., Thornton, M.J. (eds) Spin Electronics. Lecture Notes in Physics, vol 569. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45258-3_12
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DOI: https://doi.org/10.1007/3-540-45258-3_12
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