Abstract
Stray capacitances in transistor and interconnect structures play an important role in Very Large Scale Integration (VLSI) circuit designs. The application of electrostatics to the estimation and understanding of various fringing field effects is essential in the optimization of device performances [1], [2].
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References
R. Shrivastava and K. Fitzpatrick (1982), A simple model for the overlap capacitance of a VLSI MOS device, IEEE Trans. Electron Devices, ED-29, 12, 1870–1875.
R.L.M. Dang and N. Shigyo (1981), Coupling capacitances for two-dimensional wires, IEEE Electron Device Letters, EDL-2, 8, 196–197.
M. Zahn (1979), Electromagnetic Field Theory: A Problem Solving Approach, Wiley, New York, pp. 272–273.
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© 1990 Springer-Verlag New York, Inc.
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Jiang, CL. (1990). Fringing Field Effects in VLSI Structures. In: Kritikos, H.N., Jaggard, D.L. (eds) Recent Advances in Electromagnetic Theory. Springer, New York, NY. https://doi.org/10.1007/978-1-4612-3330-5_7
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DOI: https://doi.org/10.1007/978-1-4612-3330-5_7
Publisher Name: Springer, New York, NY
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